Photoelectric device and preparation method thereof

A kind of optoelectronic device and device technology, applied in the direction of electric solid-state device, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems hindering the development and application of quantum dot electroluminescence display technology, achieve long service life, reduce excitons Quenching, high luminous efficiency effect

Active Publication Date: 2021-10-12
ZHEJIANG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the performance of QLED devices in various aspects has been continuously improved in recent years, there is still a considerable gap between the basic device performance parameters such as device efficiency and device stability, and the requirements of industrial applications, which also greatly hinders the development of quantum LED technology. Development and Application of Dot Electroluminescence Display Technology

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  • Photoelectric device and preparation method thereof
  • Photoelectric device and preparation method thereof
  • Photoelectric device and preparation method thereof

Examples

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preparation example Construction

[0049] The present invention also provides a method for preparing a photoelectric device, comprising the following steps: S1, providing a substrate, setting a first zinc oxide nanocrystal solution on the substrate, annealing to form a first electron transport layer; S2, forming a first electron transport layer on the first electron transport layer The second zinc oxide nanocrystal solution is placed on the substrate without annealing, and the second electron transport layer is formed after drying; or, S1, the substrate is provided, the second zinc oxide nanocrystal solution is placed on the substrate, and the second electron transport layer is formed by annealing treatment; S2, setting the first zinc oxide nanocrystal solution on the second electron transport layer, without annealing, forming the first electron transport layer after drying; wherein, the first zinc oxide nanocrystal has a first size, and the first zinc oxide nanocrystal The existence of the first defect state em...

Embodiment 1

[0059] (1) Synthesis of the first zinc oxide nanocrystals:

[0060] Synthesis of the third zinc oxide nanocrystal: Weigh 1mmol zinc acetate, dissolve it in 10mL dimethyl sulfoxide (DMSO), stir and dissolve at 50°C; continue to weigh 4mmol lithium hydroxide, and ultrasonically assist in dissolving it in 40mL ethanol solution; LiOH was completely dissolved, and it was directly injected into the DMSO solution containing zinc acetate, and reacted at 50°C for 1h.

[0061] The third surface treatment of zinc oxide nanocrystals: After the reaction is finished, add 2mmol acetic acid to neutralize the excess alkali in the reaction, and then add 0.5mmol Mg(Ac) to the system 2 DMSO (~5mL) solution, continue to react at 50°C for 30min.

[0062] Purification of the first zinc oxide nanocrystal: Take 5 mL of the above reaction stock solution, add 20 mL of ethyl acetate, centrifuge, pour off the supernatant; dissolve the precipitate with 1 mL of ethanol, add 3 mL of ethyl acetate, and centr...

Embodiment 2

[0075] The difference between this embodiment and Example 1 is only: (1) the synthesis of the first zinc oxide nanocrystal: zinc acetate and Mg(Ac) 2 The ratio of the amount of substance is 5:1. The first zinc oxide nanocrystals with an average size of 2.2 nm were obtained.

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Abstract

The invention provides a photoelectric device and a preparation method thereof. The photoelectric device comprises a substrate, a first electron transport layer and a second electron transport layer which are stacked in sequence. The material of the first electron transport layer is first zinc oxide nanocrystal, the material of the second electron transport layer is second zinc oxide nanocrystal, the first zinc oxide nanocrystal has a first size, and the first zinc oxide nanocrystal has a first defect-state light emitting wavelength or does not have defect-state light emitting, so that exciton quenching of an interface between the substrate and the first electron transport layer can be inhibited; the second zinc oxide nanocrystal has a second size, the second zinc oxide nanocrystal has a second defect-state light emitting wavelength or does not have defect-state light emitting, and the first size and the second size are different from the first defect-state light emitting wavelength and the second defect-state light emitting wavelength; the conductivity of the second zinc oxide nanocrystal is greater than that of the first zinc oxide nanocrystal. The photoelectric device is high in luminous efficiency and long in service life, and has both placement stability and working stability.

Description

technical field [0001] The invention relates to the field of photoelectric technology, in particular to a photoelectric device and a preparation method thereof. Background technique [0002] Quantum dots are semiconductor nanocrystals with a size between 1-100nm and a "quantum confinement effect". Because quantum dots have a series of unique and excellent optical properties such as wide absorption spectrum, narrow emission fluorescence spectrum, and high luminescence quantum yield, they have broad application prospects in light-emitting diodes, solar cells, and bioluminescent labels. Especially in flat panel display applications, quantum dot electroluminescent diodes (Quantum dot light-emitting diodes, QLEDs) based on quantum dot materials have been used in display image quality, device performance, and manufacturing by virtue of the characteristics and optimization of quantum dot nanomaterials. Cost and other aspects have shown great potential. Although the performance of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K71/40H10K50/115H10K50/166H10K2102/00H10K71/00Y02P70/50
Inventor 金一政陈德睢戴兴良陈栋
Owner ZHEJIANG UNIV
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