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Auxiliary graph of dark field graph and design method of auxiliary graph

A technology for assisting graphics and layout design, applied to the photoplate-making process of patterned surfaces, originals for photomechanical processing, optics, etc., can solve the problems of high production costs, increase output, increase light transmission, and reduce The effect of production costs

Pending Publication Date: 2021-10-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0005] The present application provides an auxiliary pattern of dark field pattern and its design method, which can solve the problem of high production cost caused by manufacturing small-sized devices through negative development technology in the related art

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  • Auxiliary graph of dark field graph and design method of auxiliary graph
  • Auxiliary graph of dark field graph and design method of auxiliary graph
  • Auxiliary graph of dark field graph and design method of auxiliary graph

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Embodiment Construction

[0027] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0028] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention discloses an auxiliary graph of a dark field graph and a design method of the auxiliary graph, the dark field graph is an exposure transmission area, the dark field graph is a graph of a target device, and the density ratio of the dark field graph is smaller than 40% in the graph of the target device. According to the invention, the auxiliary graph is added in the dark field graph, so that the light flux of the dark field graph is improved, a small-size device is manufactured without a negative development technology, and the problem of high production cost caused by manufacturing the small-size device through the negative development technology in the related technology is solved; the production cost is reduced to a certain extent, and the yield is improved.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an auxiliary pattern of a dark field pattern and a design method thereof. Background technique [0002] In the semiconductor manufacturing industry, taking a memory device as an example, its size is limited by the sum of the size of the device pattern (the pattern corresponding to the active area (AA) of the memory device) and the size of the isolation pattern (isolation). In order to reduce the size, the size of the device pattern is usually designed to be several times the size of the isolation pattern (for example, 2:1). This size ratio deviates from the optimal ratio (1:1) of the photolithography process, and for conventional In the shallow trench isolation (STI) process, since the critical dimension (CD) of the device pattern is larger than the critical dimension of the isolation pattern, the process window becomes smaller. Therefore, the si...

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Application Information

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IPC IPC(8): G03F1/38
CPCG03F1/38
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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