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Infrared sensor chip based on semiconductor integrated circuit technology and manufacturing method thereof

An infrared sensor and integrated circuit technology, which is applied to semiconductor devices, circuits, electric radiation detectors, etc., can solve the problem of low detection accuracy of infrared light intensity

Active Publication Date: 2021-12-21
西安中科立德红外科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the infrared detection chip of the related art has low detection accuracy to the intensity of infrared light. For this reason, an infrared sensor chip based on semiconductor integrated circuit technology with higher detection accuracy is required.

Method used

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  • Infrared sensor chip based on semiconductor integrated circuit technology and manufacturing method thereof
  • Infrared sensor chip based on semiconductor integrated circuit technology and manufacturing method thereof
  • Infrared sensor chip based on semiconductor integrated circuit technology and manufacturing method thereof

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Embodiment Construction

[0063] In the related technology, the infrared detection chip has the problem of inaccurate detection of the intensity of infrared light. The reason for this problem is that in the related technology, the infrared detection chip includes a substrate on which a plurality of parallel An upper electrode is arranged between two adjacent lower electrodes, and one end of the plurality of upper electrodes away from the substrate is connected to the floating end of the upper connection structure, and the connection end of the upper connection structure is arranged on the substrate. The upper connection structure is a cantilever beam structure, and an infrared absorption layer is also arranged on the upper connection structure. When the infrared absorption layer absorbs infrared light, the heat causes the upper connection structure to warp, which makes the upper electrode inclined relative to the lower electrode. There is not a linear relationship between the capacitance formed by the l...

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Abstract

The invention provides an infrared sensor chip based on a semiconductor integrated circuit process and a manufacturing method thereof, and relates to the field of semiconductor technology. The infrared sensor chip based on a semiconductor integrated circuit process includes a substrate and a microbridge structure, and the microbridge structure is arranged on the substrate. , the micro-bridge structure includes a suspended area above the substrate; the suspended area of ​​the micro-bridge structure includes a transistor layer, an infrared absorbing layer, and a first electrical wiring pattern layer, and the first electrical wiring pattern layer is located on the side of the transistor layer facing the substrate , the first electrical lead pattern layer includes a plurality of first electrical leads, each first electrical lead is provided with a deformed beam on one side facing the substrate, each deformed beam is provided with a suspension electrode at one end away from the first electrical lead, adjacent Two first electrical leads connected by two pendant electrodes through corresponding deformable beams form a first capacitor. The infrared sensor chip based on the semiconductor integrated circuit technology provided by the invention is used for detecting the illumination intensity of infrared light.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an infrared sensor chip based on a semiconductor integrated circuit process and a manufacturing method thereof. Background technique [0002] The infrared detection chip (Infrared Detector) is a device that converts the incident infrared radiation signal into an electrical signal output. Infrared radiation is electromagnetic waves with wavelengths between visible light and microwaves, which cannot be detected by the human eye. To detect the existence of this radiation and measure its strength, it must be transformed into other physical quantities that can be detected and measured. Generally speaking, any effect caused by infrared radiation irradiating an object can be used to measure the intensity of infrared radiation as long as the effect can be measured and is sensitive enough. Modern infrared detection chips mainly use infrared thermal effect and photoelectric effect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/20G01J1/42H01L31/18H01L31/113
CPCG01J5/20G01J1/42H01L31/18H01L31/1136Y02P70/50
Inventor 刘伟段程鹏马仁旺郭得福王鹏欧秦伟
Owner 西安中科立德红外科技有限公司