Susceptor and device for manufacturing semiconductor

Abstract

A susceptor comprises: a body including a top surface having a rim shape; a recess including a bottom surface which is lower than the top surface and surrounded by the top surface; and a ledge extending between the top surface and the bottom surface in order to support a wafer. The ledge has a shape inclined toward the center of the bottom surface, and the flatness of the surface of the ledge may have a deviation between 10 [Mu]m and 50 [Mu]m.

Description

technical field [0001] Embodiments relate to a susceptor and a semiconductor manufacturing apparatus. Background technique [0002] An epitaxial wafer is a wafer of a thin single crystal layer formed by chemical vapor deposition (CVD, chemical vapor deposition) in a reactor heated to 1100 degrees or higher on a polished wafer used as a substrate. That is, the epitaxial wafer is produced by vapor-phase-growing a silicon epitaxial layer doped with less impurities and having high resistivity on a silicon wafer doped with impurities such as boron (B) and having low resistivity. [0003] Epitaxial wafers have high aggregation capability, low latch-up characteristics, and strong slip resistance at high temperatures, and thus have been widely used as wafers for manufacturing LSI devices as well as MOS devices in recent years. [0004] The quality items required for such an epitaxial wafer are the flatness and particle contamination level as the epitaxial wafer surface items includ...

AI Technical Summary

Problems solved by technology

[0006] In particular, when a gas is used to form an epitaxial layer on a wafer, the gas is deposited not only on the upper surface of the wafer but also on the lower surface of the wafer, and the problem is that the film deposited on the lower surface of the wafer further increases the thickness of the epitaxial wafer. Deviation of BS ZDD (BackSide Z-axis Double Derivative)

Images