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Overvoltage protection and short-circuit withstanding for gallium nitride devices

An overvoltage and gallium nitride technology, which is applied to emergency protection circuit devices for limiting overcurrent/overvoltage, parts and circuits of emergency protection devices, and can solve high-cost problems

Pending Publication Date: 2021-11-09
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This approach is costly and can subject the system to excess voltage that would otherwise be clamped by the silicon switch design

Method used

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  • Overvoltage protection and short-circuit withstanding for gallium nitride devices
  • Overvoltage protection and short-circuit withstanding for gallium nitride devices
  • Overvoltage protection and short-circuit withstanding for gallium nitride devices

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Embodiment Construction

[0014] In the drawings, like reference numerals refer to like elements throughout, and the various features are not necessarily drawn to scale. In this specification, the terms "comprising", "having", "with" or variations thereof are inclusive in a manner similar to the term "comprising", and should therefore be interpreted to mean "including but not limited to ...". And, the term "coupled" includes indirect or direct electrical connection or a combination thereof. For example, if a first device is coupled to or with a second device, that connection may be a direct electrical connection or an indirect electrical connection via one or more intervening devices and connections.

[0015] figure 1 A switching circuit 100 is shown comprising a first transistor 101 coupled in series with a second transistor 102 to form a first circuit node 104 (eg, a supply voltage node) and a second circuit node 106 (eg, a ground node). GND or switching node in high-side configuration). The firs...

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PUM

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Abstract

The embodiment of the invention relates to overvoltage protection and short-circuit withstanding for gallium nitride devices. Described examples include methods, integrated circuits (110) and switch circuits (100) including a driver circuit (116) and a silicon transistor or other current source circuit (102) coupled with a gallium nitride (GaN) or other high electron mobility first transistor (101). The driver (116) operates in a first mode to deliver a control voltage signal (GCl) to the first transistor (101), and in asecond mode in response to a detected overvoltage condition associated with the first transistor (101) to control the current source circuit (102) to conduct a sink current (12) from the first transistor (101) to affect a control voltage to at least partially turn on the first transistor (101).

Description

[0001] This application is a divisional application of an invention patent application with an application date of June 15, 2017, an application number of "201780027977.4", and an invention title of "overvoltage protection and short circuit withstand for gallium nitride devices". technical field [0002] The present invention generally relates to switching circuits and overvoltage protection for switching devices. Background technique [0003] High electron mobility transistors (HEMTs) are becoming an attractive solution for high efficiency switching power supplies, amplifiers, and other switching circuits due to their low on-state resistance (eg, RDSON). Gallium Nitride (GaN), Aluminum Gallium Nitride (AlGaN), Silicon Carbide (SiC) and other HEMTs bring higher output power in power circuits specifically at high frequencies compared to conventional silicon switching transistors, Small size and high efficiency. However, these technologies are still in the early stages of dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04H02H1/00H02H7/12H03K17/082H02M1/32H02M1/08
CPCH02H9/04H02H1/0007H02H7/1213H03K17/0822H02M1/32H02M1/08Y02B70/10H02H7/12H02H1/00
Inventor 桑迪普·R·巴尔
Owner TEXAS INSTR INC