Detection method and device
A detection method and a technology for testing wafers, applied in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as low detection efficiency, complicated detection methods, and early warning of abnormal conditions The effect of product yield, improved detection efficiency, and timely early warning
Pending Publication Date: 2021-11-12
YANGTZE MEMORY TECH CO LTD
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However, the electrical testing methods commonly used in the industry either have a long detection cycle and make it difficult to give timely warning of abnormal conditions, or the detection methods are complicated, making it difficult to detect large-scale devices, resulting in low detection efficiency
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[0069]The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0070] At present, in the semiconductor process, it is often necessary to perform an electrical test on the device after the ion implantation is completed, so as to judge the status of the ion implantation. However, the electrical testing methods commonly used in the industry or the long detection period make it difficult to give timely warnings of abnormalities in ion implantation. Various test structures on the wafer are electrically tested; or the detection means are complicated, ...
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The invention discloses a detection method and device. The method comprises the steps: placing a test wafer in an ion implantation machine, and carrying out the ion implantation of the test wafer; after the ion implantation, obtaining a color image of the test wafer; and judging the ion implantation condition of the test wafer according to the color image of the test wafer. According to the detection method provided by the invention, whether the ion implantation condition of the test wafer is normal or not can be accurately judged by acquiring the color image of the test wafer and reflecting the color features based on the color image, the operation is simple, the detection efficiency is improved, timely early warning can be realized, the problem that because the detection is not timely, the permanent damage of the test wafer is generated is avoided, and the product yield is improved.
Description
technical field [0001] The present application relates to the field of semiconductor technology, in particular to a detection method and device. Background technique [0002] With the continuous development of semiconductor technology, the role of ion implantation technology in the manufacture of integrated circuits is becoming more and more important. Ion implantation is a key step in the front-end process of integrated circuit manufacturing. Ion implantation is a technique for doping the area near the semiconductor surface, with the purpose of changing the carrier concentration and conductivity type of the semiconductor. [0003] After the ion implantation is completed, it is often necessary to conduct an electrical test on the device to judge the ion implantation status. However, the electrical testing methods commonly used in the industry either have a long testing period and make it difficult to give early warning of abnormal conditions, or the testing methods are comp...
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IPC IPC(8): H01L21/66H01L21/265
CPCH01L22/10H01L21/265
Inventor 张和艾义明於成星颜元顾鹏
Owner YANGTZE MEMORY TECH CO LTD