Infrared detector mirror image pixel and infrared detector based on CMOS process
An infrared detector and process technology, applied in the field of infrared detection, can solve the problems of low infrared detector performance, low pixel scale, and low yield rate, and achieve the effects of improving detection performance, reducing size, and increasing radiation absorption
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[0055] In order to more clearly understand the above objects, features and advantages of the present invention, the solution of the present invention will be further described below. It should be noted that the embodiments of the present invention and the features in the embodiments may be combined with each other under the condition of no conflict.
[0056] Many specific details are set forth in the following description to facilitate a full understanding of the present invention, but the present invention can also be implemented in other ways different from those described herein; obviously, the embodiments in the description are only a part of the embodiments of the present invention, and Not all examples.
[0057] figure 1 A schematic diagram of a three-dimensional structure of a mirror image pixel of an infrared detector based on a CMOS process provided by an embodiment of the present invention, figure 2 A schematic diagram of a three-dimensional decomposition structur...
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