Spatially isolated atomic layer deposition apparatus

A technology of atomic layer deposition and space isolation, which is applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of large device height, complex internal channel structure, and high processing

Active Publication Date: 2022-08-02
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method will make the height of the device larger, and the internal flow channel structure will be more complicated, making the processing more expensive and the cost higher
In other atomic layer deposition devices, although the device can be simplified, the deposition uniformity is poor

Method used

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  • Spatially isolated atomic layer deposition apparatus
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  • Spatially isolated atomic layer deposition apparatus

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Embodiment Construction

[0032] In order to make the above objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present invention. Therefore, the present invention is not limited by the specific embodiments disclosed below.

[0033] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " Back, Left, Right, Vertical, Horizontal, Top, Bottom, Inner, Outer, Clockwise, Countercl...

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Abstract

The invention relates to a space isolation atomic layer deposition device, comprising: a casing, the interior of which is hollow to form an air duct; a baffle, the baffle is located in the casing, and the main air duct in the air duct is located on one side of the baffle, The static pressure chamber is located on the other side of the partition plate in the air duct, and a slit is formed at the partition plate. The main air duct and the static pressure chamber are connected through the slit, and the direction of the gas flowing in the length direction of the main air duct is the first direction, along the first direction, the slit includes a plurality of sections; the air inlet, the air inlet is arranged on the casing, and the air inlet is communicated with the main air duct; the air outlet, the air outlet is arranged on the casing, and the outlet The air port is communicated with the static pressure chamber, and the air outlet extends along the first direction; in the area close to the end along the first direction, the width of the slit in at least part of the interval is larger than the width of the slit in the next interval, so that the main air in each interval The amount of gas flowing into the static plenum through the slit in the channel is equal.

Description

technical field [0001] The present invention relates to the technical field of atomic layer deposition, in particular to a spatially isolated atomic layer deposition device. Background technique [0002] Atomic layer deposition is an ultra-thin film preparation technology, through which substances can be deposited on the surface of a substrate layer by layer in the form of a single atomic film. The thickness of the thin film formed during atomic layer deposition is very small, which can reach the nanometer level and has good consistency. Therefore, it is widely used in the fields of micro-nano electronic devices and solar cells. In the related art, in some atomic layer deposition apparatuses, the gas flowing into the air inlet is divided multiple times to increase the number of air injection ports and nozzles, so that the length that the air injection ports can cover is increased, thereby realizing large-area deposition. However, this method will make the height of the devi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455
CPCC23C16/45544C23C16/45591C23C16/45578
Inventor 陈蓉聂煜峰杨帆李邹霜邓匡举
Owner HUAZHONG UNIV OF SCI & TECH
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