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A method to improve MWT hole concealment

A technology of aluminum back field and mesh, which is applied in the direction of sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve the problems of broken silicon wafers, large force at the raised negative pole, and hidden battery holes. Cracks and other problems to achieve the effect of reducing hidden cracks and reducing stress

Active Publication Date: 2022-06-28
JIANGSU SUNPORT POWER CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the fourth step, when the grid lines are printed on the front side, the raised negative pole (on the back of the cell) faces down, which will cause a large force on the raised negative pole, resulting in breaking the silicon wafer ( figure 1 ), resulting in cracks in the position of the cell hole

Method used

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  • A method to improve MWT hole concealment
  • A method to improve MWT hole concealment
  • A method to improve MWT hole concealment

Examples

Experimental program
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Effect test

Embodiment 1

[0029] The present embodiment is a method for improving MWT hole concealment, and the method includes the following steps:

[0030] S1, printing the plugging paste of the MWT cell to form a negative electrode point on the cell;

[0031] S2, printing the back silver paste to form a positive point;

[0032] S3, making a stencil for printing the aluminum back field, the stencil includes a mesh layer, the thickness of the emulsion corresponding to the negative point position is greater than that of other parts of the aluminum back field, and the corresponding negative point position is coated with a 12-25um film thickness emulsion; Printed aluminum back field;

[0033] S4, flip the MWT cell sheet, and print the front grid lines.

Embodiment 2

[0035] As a preferred embodiment of the application, in the S3, a screen plate with an emulsion thickness of 25um is used at the position of the negative electrode point hole.

[0036] The structure of the current printed aluminum back field stencil is as follows figure 2 As shown in the figure, the number marked in the figure is the aperture data, the middle area of ​​the screen is the mesh, and the corresponding structures of the positive electrode point and the negative electrode point are preset in the mesh, wherein the aperture of the negative electrode point is 5mm, and the aperture of the positive electrode point is 2.7 mm. mm, the distance between the positive electrode points is 27mm, and the structure of the mesh is as follows Figure 5 As shown, the electrode point position is coated with a layer of emulsion with a thickness of 12um film on the mesh (a common material for stencil production, a kind of photosensitive glue, when making the stencil, according to the r...

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Abstract

The invention discloses a method for improving MWT hole concealment. When printing the aluminum back field, the method uses a special aluminum back field printing screen to print the aluminum back field. The screen contains a mesh layer, and the mesh Emulsion is coated on the layer, and the thickness of the emulsion at the corresponding negative pole on the mesh layer is different from that of other parts. The present invention thickens the film thickness at the hole position of the negative electrode of the aluminum back field screen plate, so that when the battery is printed, the edge thickness of the printed aluminum back field (close to the negative pole) increases, and the height difference between the aluminum back field and the negative pole is reduced, so that When the positive electrode of the battery is printed, the force on the hole position is greatly reduced, thereby reducing the cracks at the hole position of the MWT negative electrode.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic module production, and in particular relates to a method for improving the hole concealment of MWT. Background technique [0002] MWT battery is a kind of battery design in which holes are punched on the silicon wafer. By filling the electrode points with paste, the negative electrode points are led to the back of the battery. The silver paste forms the positive point, the third line prints the aluminum back field on the back, and the fourth line prints the front grid line. The first three prints are all printed on the back of the silicon wafer. After flipping, the fourth line is printed on the front of the silicon wafer; [0003] In the current MWT design, the thickness of the aluminum back field is about 13±2um, and the MWT negative point is about 23±2um in order to achieve a certain hole filling effect (low thickness will cause abnormal hole filling), and the height difference from the alu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0224B41M1/12B41M1/26
CPCH01L31/1804H01L31/02245H01L31/022433B41M1/12B41M1/26Y02P70/50
Inventor 章明职森森吴仕梁路忠林张凤鸣刘锐陈伟
Owner JIANGSU SUNPORT POWER CORP LTD