Device and method for plasma capacitive coupling discharge copper electroplating under atmospheric pressure

A technology of plasma and capacitive coupling, which is applied in the direction of plasma, printed circuit, electrical components, etc., can solve the problems of high cost, pollution, and high process condition requirements, and achieve low requirements for equipment and environment, simple and efficient operation, and process The effect of simple process

Pending Publication Date: 2022-01-11
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the defects of the prior art, the purpose of the present invention is to provide a device and method for in-situ direct copper plating on the inner wall of the through hole through cold plasma under the condition of atmospheric pressure, aiming to solve the problem of using copper plating on the inner wall of the through hole in the prior art. Electroplating or electroless plating has serious pollution, high cost, and technical problems such as high requirements on process conditions

Method used

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  • Device and method for plasma capacitive coupling discharge copper electroplating under atmospheric pressure
  • Device and method for plasma capacitive coupling discharge copper electroplating under atmospheric pressure
  • Device and method for plasma capacitive coupling discharge copper electroplating under atmospheric pressure

Examples

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Embodiment 1

[0054] A cold plasma direct copper plating process on the inner wall of a wafer through-silicon hole, comprising the following steps:

[0055] (1) Put a silicon wafer with a through-hole structure with a diameter of 50 mm, a thickness of 0.3 mm, and a through-hole diameter of 0.15 mm into a solution of 0.1 mol / L hydrofluoric acid for 10 minutes, and the cleaned silicon wafer The circles were put into 2mol / L acetone solution and 99.7% ethanol solution for 30 minutes respectively for cleaning;

[0056] (2) Put the silicon wafer with the through-hole structure into a deionized water ultrasonic cleaning machine, ultrasonically clean it for 10 minutes, and dry the silicon wafer with nitrogen gas for 10 minutes;

[0057] (3) Put the dried silicon wafer with the through-hole structure into such as figure 1 In the plasma capacitively coupled discharge device shown, figure 1 Among them, 1 is a radio frequency power supply, 2 is a matcher, 3 is a copper wire, 4 is a quartz tube with a...

Embodiment 2

[0060] (1) Put a silicon wafer with a through-hole structure with a diameter of 50 mm, a thickness of 0.5 mm, and a through-hole diameter of 0.3 mm into a 0.1mol / L hydrofluoric acid solution for 10 minutes, and clean the silicon wafer with a through-hole structure. The silicon wafer with the pore structure is put into 2mol / L acetone solution and 99.7% ethanol solution for 30 minutes respectively for cleaning;

[0061] (2) Put the silicon wafer with the through-hole structure into a deionized water ultrasonic cleaning machine, ultrasonically clean it for 10 minutes, and then dry the silicon wafer with the through-hole structure with nitrogen gas, and the drying time is 10 minutes ;

[0062] (3) Put the dried silicon wafer with through-hole structure into figure 1 In the plasma capacitively coupled discharge device shown, a silicon wafer with a through-hole structure is placed on a mechanical platform, and the coil is wound around the outside of the quartz tube. 200sccm, turn ...

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Abstract

The invention belongs to the field of through silicon via (TSV) processing in integrated circuit / chip manufacturing, and particularly relates to a device and a method for plasma capacitive coupling discharge copper electroplating under atmospheric pressure. In the device, a coil surrounds the outer wall of a columnar insulating tube; one end of the coil is connected with one end of the matcher connected with the cathode of a radio frequency power supply, and the other end of the coil is a free end; a copper wire penetrates through the central through hole of the columnar insulating tube, one end of the copper wire is connected with one end of the matcher connected with the anode of the radio frequency power supply, and the other end of the copper wire is a free end; when the device works, the free end of the copper wire is positioned in the through hole of the to-be-plated copper test piece, and a copper film is plated on the inner wall of the through hole of the to-be-plated copper test piece by taking the copper wire as an evaporation sputtering source. When the device is used for plating copper on the inner wall of the through hole of the silicon wafer, processes such as chemical plating and electroplating are not needed. The method is scientific, reasonable, simple and feasible, and has the characteristics of environmental protection, high efficiency, high industrial extensibility and the like.

Description

technical field [0001] The invention belongs to the field of through-silicon via (Through Silicon Via, TSV) processing in integrated circuit / chip manufacturing, and more specifically relates to a device and method for plasma capacitive coupling discharge copper plating under atmospheric pressure. Background technique [0002] Through-silicon via technology is the latest technology to realize the interconnection between chips by making vertical conduction between chips and between wafers. Unlike previous IC package bonding and overlay technologies using bumps, TSV can maximize the density of chips stacked in three dimensions, minimize the size of the chip, and greatly improve the performance of chip speed and low power consumption. The emergence of through-silicon via technology provides a solution for low-cost, low-power consumption, high-performance, high-density, and small-size chip system package integration. [0003] Three-dimensional TSV technology includes hole prepar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/42H05H1/22H05H1/24
CPCH05K3/423H05H1/24H05H1/22
Inventor 夏卫生曾婉姝于尧
Owner HUAZHONG UNIV OF SCI & TECH
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