The invention belongs to the field of through silicon via (TSV) processing in integrated circuit / chip manufacturing, and particularly relates to a device and a method for plasma capacitive coupling discharge copper electroplating under atmospheric pressure. In the device, a coil surrounds the outer wall of a columnar insulating tube; one end of the coil is connected with one end of the matcher connected with the cathode of a radio frequency power supply, and the other end of the coil is a free end; a copper wire penetrates through the central through hole of the columnar insulating tube, one end of the copper wire is connected with one end of the matcher connected with the anode of the radio frequency power supply, and the other end of the copper wire is a free end; when the device works, the free end of the copper wire is positioned in the through hole of the to-be-plated copper test piece, and a copper film is plated on the inner wall of the through hole of the to-be-plated copper test piece by taking the copper wire as an evaporation sputtering source. When the device is used for plating copper on the inner wall of the through hole of the silicon wafer, processes such as chemical plating and electroplating are not needed. The method is scientific, reasonable, simple and feasible, and has the characteristics of environmental protection, high efficiency, high industrial extensibility and the like.