A bonding method and bonding structure of a surface acoustic filter

A technology of surface acoustic filter and bonding structure, applied in impedance network, electrical components and other directions, can solve the problems of poor sealing of surface acoustic filter wafer, low bonding stability of cover plate and substrate, etc., to increase bonding Effect of contact area

Active Publication Date: 2022-05-13
深圳新声半导体有限公司
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Problems solved by technology

[0003] The invention provides a bonding method and bonding structure of a surface acoustic filter, which is used to solve the problem of low bonding stability between the cover plate and the substrate in the wafer sealing structure of the surface acoustic filter, and the wafer of the surface acoustic filter For the problem of poor sealing, the technical solutions adopted are as follows:

Method used

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  • A bonding method and bonding structure of a surface acoustic filter
  • A bonding method and bonding structure of a surface acoustic filter
  • A bonding method and bonding structure of a surface acoustic filter

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Embodiment Construction

[0033] The preferred embodiments of the present invention will be described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.

[0034] Embodiments of the present invention propose a bonding structure of a surface acoustic filter, such as Figure 1 to Figure 3 As shown, the bonding structure includes a first bonding metal layer, a second bonding metal layer and a third bonding metal layer; the third bonding metal layer is arranged under the cover plate of the surface acoustic filter On the bonding surface of the surface; the first bonding metal layer is arranged on the surface of the third bonding metal layer on the non-cover side; the second bonding metal layer is arranged on the surface acoustic filter The upper surface of the base body is bonded with the cover plate; the first bonding meta...

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Abstract

The invention provides a bonding method and bonding structure of a surface acoustic filter. The bonding structure includes a first bonding metal layer, a second bonding metal layer and a third bonding metal layer; the third bonding metal layer is arranged on the bond on the lower surface of the cover plate of the surface acoustic filter The bonding surface; the first bonding metal layer is arranged on the surface of the third bonding metal layer on the non-cover side; the second bonding metal layer is arranged on the substrate of the surface acoustic filter The bonding surface on which the surface is bonded to the cover plate; the first bonding metal layer is provided with multiple groups of bonding grooves; the second bonding metal layer is provided with bonding grooves Multiple sets of bonding protrusions having the same groove shape and number but different heights from the depth dimension of the bonding groove.

Description

technical field [0001] The invention provides a bonding method of a surface acoustic filter and a bonding structure thereof, belonging to the technical field of thin film filters. Background technique [0002] The surface acoustic filter is formed by evaporating a layer of metal film on a material substrate with piezoelectric effect, and then forming a pair of interdigitated electrodes at both ends through photolithography. When the signal voltage is applied to the transmitting transducer, an electric field is formed between the input interdigital electrodes to cause mechanical vibration of the piezoelectric material to propagate to the left and right sides in the form of ultrasonic waves, and the energy to the edge side is absorbed by the sound-absorbing material. absorb. At the receiving end, the mechanical vibration is converted into an electrical signal by the receiving transducer and output by the interdigitated electrodes. However, due to the continuous mechanical vi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/05H03H9/10
CPCH03H3/02H03H9/02614H03H9/0538H03H9/1064H03H2003/023
Inventor 不公告发明人
Owner 深圳新声半导体有限公司
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