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Silicon carbide seed crystal and method of manufacturing silicon carbide crystal

A technology of silicon carbide crystal and silicon carbide, which is applied in the field of silicon carbide seed crystal and its manufacturing, can solve the problems of inability to grow high-quality silicon carbide crystal and affect the yield rate, etc.

Pending Publication Date: 2022-01-28
GLOBALWAFERS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, take silicon carbide seed crystals as an example. If the quality of silicon carbide seed crystals is not good, many defects will be generated due to different growth directions during the crystal growth process, which will affect the yield and cannot grow high-quality carbide. silicon crystal

Method used

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  • Silicon carbide seed crystal and method of manufacturing silicon carbide crystal
  • Silicon carbide seed crystal and method of manufacturing silicon carbide crystal
  • Silicon carbide seed crystal and method of manufacturing silicon carbide crystal

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1-10

[0063] in such as image 3 In the equipment, different silicon carbide seeds are placed on the top of the crucible, and the silicon carbide-containing raw material is placed in the crucible to heat the silicon carbide raw material. Different silicon carbide seeds are shown in Table 1 below, which have different basal plane dislocation density BPD, basal plane dislocation density difference ratio D, local thickness variation LTV, and stacking fault SF density. In addition, the temperature gradient in the crucible is adjusted to form heat fields with different radial temperature gradients in the crucible.

[0064]As shown in Table 1 below, the temperature gradient of Comparative Examples 1-3 is greater than 50°C / cm, and the temperature gradient of Examples 1-7 is less than or equal to 50°C / cm. For example, in Example 1 of Table 1 below, a diameter is formed in the crucible Towards a thermal field with a temperature gradient of 20°C / cm. Then, the silicon carbide raw material is...

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Abstract

The disclosure provides a silicon carbide seed crystal and a method of manufacturing a silicon carbide crystal. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1), a local thickness variation (LTV) of the silicon carbide seed crystal is 2.5 [mu]m or less, and a stacking fault (SF) density of the silicon carbide seed crystal is 10 EA / cm2 or less: D=(BPD1-BPD2) / BPD1 <= 25% (1).

Description

technical field [0001] The invention relates to a semiconductor crystal seed and a manufacturing method thereof, and a semiconductor crystal manufacturing method, in particular to a silicon carbide seed crystal and a manufacturing method thereof. Background technique [0002] In the semiconductor industry, the method of manufacturing wafers involves first forming a crystal and then slicing the crystal to obtain wafers. Crystals are produced, for example, in a high-temperature environment. In a common crystal manufacturing method, a seed crystal is placed in a high-temperature furnace, the seed crystal contacts a gaseous or liquid raw material, and a semiconductor material is formed on the surface of the seed crystal until a crystal with a desired size is obtained. Crystals can have different crystalline structures depending on the method of manufacture and the raw material from which they are made. [0003] In the process of crystal growth, the quality of the seed crystal ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B29/36C30B23/002C30B23/063C30B23/025C01B32/956H01L29/30C30B23/066
Inventor 林钦山
Owner GLOBALWAFERS CO LTD