Substrate treatment method and substrate treatment apparatus
A substrate processing method and a substrate processing device technology, which are applied to chemical instruments and methods, cleaning methods and utensils, cleaning methods using tools, etc., can solve problems such as bottom damage, and achieve the effect of inhibiting damage
Pending Publication Date: 2022-02-18
SHIBAURA MECHATRONICS CORP
View PDF1 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, since the portion where the concave-convex member that functions as a catalyst does not contact will not be removed, there may be residual removal on the surface of the substrate.
In addition, the side wall and bottom of the concave portion may be damaged by the liquid medicine that penetrated into the concave portion, for example.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0023] Embodiments are illustrated below with reference to the drawings. In addition, in each drawing, the same code|symbol is attached|subjected to the same component, and detailed description is abbreviate|omitted suitably.
[0024] Substrate structure
[0025] First, the substrate 100 processed by the substrate processing method and the substrate processing apparatus 1 according to the present embodiment will be described.
[0026] figure 1 is a schematic cross-sectional view for illustrating the substrate 100 .
[0027] In addition, a case where the substrate 100 is a semiconductor substrate such as a wafer will be described below as an example. However, the substrate 100 is not limited to a semiconductor substrate, and may be, for example, a substrate for a flat panel display such as a liquid crystal panel or a microstructure such as MEMS (Micro Electro Mechanical Systems).
[0028] Such as figure 1 As shown, the substrate 100 has, for example, a base 101 , a first l...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| depth | aaaaa | aaaaa |
| size | aaaaa | aaaaa |
Login to View More
Abstract
The invention provides a substrate treatment method and a substrate treatment apparatus. It is possible to remove the upper end of a protrusion and suppress the occurrence of damage to the recess in a substrate having unevenness formed on a surface. A substrate treatment method according to one embodiment is a substrate treatment method of removing an upper end of a protrusion in a substrate, an unevenness being formed on a surface of the substrate. The method comprises: a step of supplying a first liquid on the surface of the substrate, the unevenness being formed on the surface; a step of forming a protective layer, the protective layer covering the surface of the substrate from the first liquid supplied to the surface of the substrate; a step of supplying a second liquid onto the protective layer; and a step of physically removing the protective layer, the protective layer being on the upper end of the protrusion, and bringing the second liquid into contact with the upper end of the protrusion, the protective layer being removed from the upper end of the protrusion.
Description
technical field [0001] Embodiments of the present invention relate to a substrate processing method and a substrate processing device. Background technique [0002] In the manufacturing process of a semiconductor device, a flat panel display, etc., uneven|corrugated parts, such as a pattern, may be formed on the surface of a board|substrate. Furthermore, a process of removing the upper ends of the protrusions formed on the surface of the substrate may be performed. [0003] For example, the upper ends of the protrusions are chemically and mechanically removed by CMP (Chemical Mechanical Polishing) treatment. However, in the CMP process, since the polishing pad is brought into direct contact with the surface of the substrate for polishing, when the upper end of the convex portion is removed, for example, the side wall and bottom of the concave portion may be damaged. In addition, the abrasive may remain inside the concave portion, and handling in subsequent steps may become...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67B08B11/00
CPCH01L21/67075H01L21/6708H01L21/6704H01L21/67046B08B11/00H01L21/32134H01L21/31133H01L21/31144H01L21/67219H01L21/31111H01L21/02096A46B2200/3073A46B13/008A46B13/02A46B9/005B08B1/12B08B1/32
Inventor 长嶋裕次
Owner SHIBAURA MECHATRONICS CORP