Unlock instant, AI-driven research and patent intelligence for your innovation.

Data quick searching device based on resistive memory and use method

A technology of resistive memory and memory, which is applied in the direction of static memory, digital memory information, information storage, etc., and can solve the problem of long time consumption

Pending Publication Date: 2022-02-25
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This process has to go through a complete reading process, which takes a long time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data quick searching device based on resistive memory and use method
  • Data quick searching device based on resistive memory and use method
  • Data quick searching device based on resistive memory and use method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0024] Such as figure 1 As shown, the embodiment of the present invention provides a fast data search device based on a resistive memory, including a reading module, an amplification module, and a judgment module using an AND circuit.

[0025] The reading module includes a PDR transistor, a PDD transistor, an NCR transistor and an NCD transistor;

[0026] The source of the PDR transistor receives the read voltage signal V read , the gate receives and reads the firs...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a data quick searching device based on a resistive memory and a use method. The searching device comprises a reading module, an amplifying module and a judging module, wherein the reading module comprises a to-be-tested resistive memory unit and a target resistive memory unit. The to-be-tested resistive memory unit is used for storing to-be-detected data; the target resistive memory unit is used for storing target data. In the reading module, an NCD transistor and an NCR transistor form a voltage clamping circuit to ensure that the reading voltage of the to-be-tested resistive memory unit is the same as that of the target resistive memory unit; a PDD transistor and a PDR transistor form a load circuit, and a read current signal is converted into a voltage signal. And the judgment module adopts an AND gate to sample the amplified reading result and generate result judgment, complete reading is not needed, the consumed time is short, and quick data search can be realized.

Description

technical field [0001] The invention belongs to the technical field of memory data processing, and in particular relates to a resistive memory-based fast data search device and a using method. Background technique [0002] The continuous expansion of data scale has put forward higher requirements for memory capacity, density, power consumption, read and write speed, and lifespan. In recent years, researchers have proposed non-volatile memories such as magnetic memory (MRAM), resistive memory (RRAM) and phase change memory (PCRAM) that use resistive memory principles to store binary data. Compared with traditional volatile memory, it has the advantages of no data loss after power failure, fast read and write speed, and low working voltage. Non-volatile memories that store binary data based on the resistive storage principle have been widely used. [0003] In conventional mode, the resistive memory lookup process uses a read circuit to compare the cell under test to a refere...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C13/0002G11C13/004G11C2013/005
Inventor 刘伟强吴比刘凯
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS