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Assemblies having conductive interconnects which are laterally and vertically offset relative to one another

A technology of conductive interconnection and lateral offset, applied in the direction of electrical components, semiconductor devices, electrical solid devices, etc., can solve the problem of interconnection 1014 falling on conductive line 1012 and so on

Pending Publication Date: 2022-02-25
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] Although interconnect 1014 is shown aligned with interconnect 1004, in practice protrusion 1007 may change the shape of conductive line 1012, making it difficult, if not impossible, to properly land interconnect 1014 on conductive line 1012.

Method used

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  • Assemblies having conductive interconnects which are laterally and vertically offset relative to one another
  • Assemblies having conductive interconnects which are laterally and vertically offset relative to one another
  • Assemblies having conductive interconnects which are laterally and vertically offset relative to one another

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Embodiment Construction

[0029] Some embodiments include multi-layer (multi-level, multi-stack) arrangements with vertically extending interconnects in the gaps between the layers. The interconnects alternate between first interconnects and second interconnects in the vertical direction. The second interconnect is laterally offset relative to the first interconnect. In some embodiments, the first interconnect and the second interconnect may be incorporated into a conductive path that electrically couples the sense / access line with logic circuitry (eg, CMOS). refer to Figures 7 to 14 Example embodiments are described.

[0030] It is useful to describe an example memory array before describing the interconnection arrangements of example embodiments. Instance memory array 10 area in Figure 7 shown in . The array includes memory devices 20 . The first sense / access line 14 is above the memory device and the second sense / access line 16 is below the memory device. The first sensing / access line 14 ext...

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Abstract

Assemblies having conductive interconnects which are laterally and vertically offset relative to one another. Some embodiments include an integrated assembly having a base which includes first circuitry. Memory decks are over the base. Each of the memory decks has a sense / access line coupled with the first circuitry. The memory decks and base are vertically spaced from one another by gaps. The gaps alternate in a vertical direction between first gaps and second gaps. Overlapping conductive paths extend from the sense / access lines to the first circuitry. The conductive paths include first conductive interconnects within the first gaps and second conductive interconnects within the second gaps. The first and second conductive interconnects are laterally offset relative to one another.

Description

technical field [0001] Integrated components (eg, integrated memory). An integrated component having multiple layers (stacks, levels) with conductive interconnects extending between the layers. Background technique [0002] In some applications, it may be necessary to couple circuitry from one layer to another. 1-4 illustrate example prior art processes for electrically coupling circuits across layers. [0003] FIG. 1 shows an assembly 1000 having a conductive structure 1002 at a first level and having a conductive interconnect 1004 extending upwardly from the structure 1002 . In some applications, structure 1002 may be coupled with logic circuitry (eg, complementary metal-oxide-semiconductor (CMOS)). [0004] In the illustrated embodiment, insulating liner 1006 is along the outer edge of the conductive interconnect, and insulating material 1008 is along liner 1006 and on structure 1002 . The insulating material 1008 and the liner 1006 may include the same composition as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
CPCH01L21/76831H01L21/76879H01L23/528H01L23/5226H10B61/10H10B63/24H10B63/84H10B63/20H10B63/80H10B61/00
Inventor R·艾哈迈德R·科蒂D·A·奎利D·普拉特
Owner MICRON TECH INC