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Process method for synchronous heat treatment/magnetron sputtering of TiO2 film

A technology of magnetron sputtering and thin film technology, applied in sputtering plating, metal material coating technology, ion implantation plating, etc., can solve problems such as complex processes, achieve good repeatability, improve heat treatment efficiency, and improve antibacterial The effect of anti-mildew effect

Pending Publication Date: 2022-03-08
HEILONGJIANG INST OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problem that the existing magnetron sputtering technology requires subsequent high-temperature annealing treatment to make the process complicated, the patent of the present invention provides a synchronous heat treatment / magnetron sputtering TiO2 thin film process method

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  • Process method for synchronous heat treatment/magnetron sputtering of TiO2 film

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Embodiment 1

[0031] A synchronous heat treatment / magnetron sputtering TiO2 film process method, characterized in that: the substrate 3 is located in the center of the coating space and rotates, the plasma source anode 1 and the Ti target 4 are located on both sides of the substrate 3, and the TiO2 film is deposited The value and duration of the bias voltage change with the rotation position of the substrate, and the film deposition is completed under plasma heating and magnetron sputtering. The duration of the bias voltage on one side of the Ti target 4 is the rotation time of the substrate 3 within the range of 40° where the substrate 3 faces the Ti target 4; The rotation time of matrix 3 in ° range.

[0032] A kind of synchronous heat treatment / magnetron sputtering TiO2 thin film process method, comprises following preparation steps:

[0033] (1) The substrate 3 was cleaned in an oil cleaning agent at a temperature of 40-80°C for 30 minutes, then ultrasonically cleaned in acetone for 30...

Embodiment 2

[0040] A synchronous heat treatment / magnetron sputtering TiO2 film process method, characterized in that: the substrate 3 is located in the center of the coating space and rotates, the plasma source anode 1 and the Ti target 4 are located on both sides of the substrate 3, and the TiO2 film is deposited The value and duration of the bias voltage change with the rotation position of the substrate 3, and the film deposition is completed under plasma heating and magnetron sputtering. The duration of the bias on one side of the Ti target 4 is the rotation time of the substrate 3 within 100° of the substrate 3 facing the Ti target 4; The rotation time of the substrate 3 within the range of °; the rotation speed of the substrate 3 is 1 revolution / min.

[0041] A kind of synchronous heat treatment / magnetron sputtering TiO2 thin film process method, comprises following preparation steps:

[0042](1) The substrate 3 was cleaned in an oil cleaning agent at a temperature of 40-80°C for 3...

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Abstract

The invention discloses a process method for synchronous heat treatment / magnetron sputtering of a TiO2 thin film, and belongs to the field of thin film preparation. The invention aims to solve the problem that subsequent high-temperature annealing treatment is needed when the TiO2 film is prepared by the existing magnetron sputtering technology. When the TiO2 film is deposited, the thermal radiation of a plasma source and the ion bombardment effect are utilized to synchronously realize the rapid high-temperature annealing treatment of the single-layer TiO2, the anode of the plasma source and the Ti target are positioned on the two sides of the substrate, and the bias value and the duration change along with the rotation position of the substrate. The sum of the values of the plasma source anode side bias voltage is higher than the Ti target side bias voltage. The deposited TiO2 film is of an anatase type crystal structure, and staphylococcus aureus is effectively inhibited.

Description

technical field [0001] The invention relates to the field of thin film preparation, in particular to a synchronous heat treatment / magnetron sputtering TiO2 thin film process method. Background technique [0002] At present, the demand and quality requirements for antibacterial and antifungal films are gradually increasing all over the world, and a variety of functional films have been developed one after another. Among them, TiO2 film is considered to have good antibacterial and antifungal properties. TiO2 thin films have various crystal structures, but only TiO2 thin films with anatase crystal structure can achieve antibacterial and antifungal effects. [0003] There are many ways to prepare TiO2 thin films, mainly using magnetron sputtering technology. Although the preparation of TiO2 thin films by magnetron sputtering technology has been widely studied, the existing technology requires subsequent high-temperature annealing treatment to obtain anatase TiO2 crystal structu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35C23C14/58
CPCC23C14/083C23C14/35C23C14/0036C23C14/5806
Inventor 许建平王佳杰于久灏陈晶李青川张梓烨
Owner HEILONGJIANG INST OF TECH
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