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Composite sintered body, semiconductor manufacturing device member, and method for manufacturing composite sintered body

A manufacturing method and a manufacturing device technology, which are applied in the field of composite sintered bodies, can solve problems such as cracks in the base material and electrode peeling, and achieve the effects of reducing the difference in thermal expansion coefficient and suppressing the increase in resistivity

Active Publication Date: 2022-03-15
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this firing, there is a possibility of adverse effects due to the difference between the thermal expansion coefficient of the substrate and the electrode.
For example, there is a possibility of cracks developing on the substrate, or the electrode peeling off from the substrate

Method used

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  • Composite sintered body, semiconductor manufacturing device member, and method for manufacturing composite sintered body
  • Composite sintered body, semiconductor manufacturing device member, and method for manufacturing composite sintered body
  • Composite sintered body, semiconductor manufacturing device member, and method for manufacturing composite sintered body

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Embodiment Construction

[0038] figure 1 It is a cross-sectional view of the base 1 according to one embodiment of the present invention. The susceptor 1 is a semiconductor manufacturing device component used in the semiconductor manufacturing device. base 1 from figure 1 A substantially disc-shaped semiconductor substrate 9 (hereinafter simply referred to as "substrate 9") is supported on the lower side thereof. In the description below, the figure 1 The upper side and the lower side in are simply referred to as "upper side" and "lower side". Additionally, the figure 1 The up and down directions in are simply referred to as "up and down directions". figure 1 The up-down direction in the figure does not necessarily coincide with the actual up-down direction when the susceptor 1 is installed on the semiconductor manufacturing apparatus.

[0039] The susceptor 1 includes a main body 21 , a base 22 and electrodes 23 . The main body portion 21 is a substantially plate-shaped (for example, substanti...

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Abstract

The invention provides a composite sintered body, a semiconductor manufacturing apparatus member, and a manufacturing method of the composite sintered body, which can inhibit the resistivity increase of an electrode and reduce the difference between the thermal expansion coefficients of the electrode and a base material. A composite sintered body (20) is provided with a base material having a ceramic as a main material, and an electrode (23) disposed inside or on the surface of the base material. The electrode (23) contains W and ZrO2. As a result, the difference between the thermal expansion coefficients of the electrode (23) and the base material can be reduced. As a result, cracking of the substrate and peeling of the electrode (23) due to the difference in the coefficient of thermal expansion between the electrode (23) and the substrate can be suppressed. Furthermore, in the composite sintered body (20), an increase in the resistivity of the electrode (23) can be suppressed. As a result, the amount of heat generated by the electrode (23) can be controlled with high precision.

Description

technical field [0001] The present invention relates to a composite sintered body, a semiconductor manufacturing device member, and a method for manufacturing the composite sintered body. Background technique [0002] Conventionally, bases such as electrostatic chucks that hold semiconductor substrates by suction, heaters that heat semiconductor substrates, and electrostatic chuck heaters that combine them are used in semiconductor substrate manufacturing equipment and the like. The susceptor includes a base material mainly composed of a sintered body of ceramics such as alumina, and electrodes arranged inside the base material. [0003] The above-mentioned susceptor is formed, for example, by integrally firing the base material and the electrode. In this firing, there is a possibility of adverse effects due to the difference between the coefficient of thermal expansion of the substrate and the coefficient of thermal expansion of the electrode. For example, there is a poss...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/10C04B35/48C04B35/622C04B35/645
CPCC04B35/10C04B35/622C04B35/48C04B35/645C04B2235/3206C04B2235/3222C04B2235/404C04B2235/5436C04B2235/5445C04B2235/602C04B2235/6025C04B2235/656C04B2235/6567C04B2235/6581C04B2235/9607H01L21/6831H01L21/68757C04B35/111C04B35/117B32B18/00C04B2237/343C04B35/5626C04B2235/3217C04B2235/80C04B2235/6562C04B2235/6565C04B2235/658C04B37/006H01L21/6833H01L21/67103C04B2237/068C04B2237/12C04B2235/3244C04B35/119C04B2235/96C04B35/62665
Inventor 阿闭恭平宫西启太永井明日美山口浩文
Owner NGK INSULATORS LTD