Ferroelectric memory cell, its preparation method and layout structure of ferroelectric memory

Abstract

The invention provides a ferroelectric memory unit, its preparation method and layout structure of the ferroelectric memory. The ferroelectric memory unit includes: a selection transistor, including a substrate, a gate structure on the substrate and substrates located on both sides of the gate structure The source region and the drain region; the trench type ferroelectric capacitor, including the groove arranged in the drain region, the lower plate formed on the bottom of the groove and the side wall, the ferroelectric capacitor dielectric layer formed on the surface of the lower plate, and An upper plate located on the upper surface of the ferroelectric capacitor dielectric layer. The ferroelectric memory unit of the present invention can solve the problem of insufficient capacitance area when the ferroelectric memory unit is reduced, so that the capacity of the ferroelectric memory is enlarged by 2-4 times, and the storage performance of the unit is greatly improved. The invention can reduce the parasitic capacitance and interconnection resistance, and improve the performance of the ferroelectric memory unit.

Description

technical field [0001] The invention belongs to the field of semiconductor memory design and manufacture, in particular to a ferroelectric memory unit, its preparation method and the layout structure of the ferroelectric memory. Background technique [0002] In the current mainstream 1T-1C ferroelectric memory unit, the main key technology is to increase the capacitance C. Traditional stacked ferroelectric memory cells use plate capacitors between metals, so the capacitance value of the miniaturized plate capacitor structure will decrease as the area shrinks. The problem of shrinking, further, too small a capacitor can store a limited charge, which makes the performance of the memory cell degrade in actual work and even makes it difficult to read. [0003] It should be noted that the above introduction to the technical background is only for the convenience of a clear and complete description of the technical solution of the present application, and for the convenience of u...

AI Technical Summary

Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a ferroelectric memory cell, its preparation method and layout structure of the ferroelectric memory, which are used to solve the problem of limited storage charge caused by too small capacitance in the prior art. question

Images