Method and device for improving critical dimension uniformity of wafer

A critical dimension and uniformity technology, applied in the field of improving the critical dimension uniformity of the wafer, can solve the problems of the wafer critical dimension uniformity deterioration, etc., and achieve the effect of improving the critical dimension uniformity

Pending Publication Date: 2022-03-29
YANGTZE MEMORY TECH CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The main purpose of this application is to provide a method, device, wafer, computer-readable storage medium and lithography equipment for improving the uniformity of critical dimensions of the wafer, so as to solve the problems caused by uneven drying and heating in the prior art. The problem of poor critical dimension uniformity of the wafer

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  • Method and device for improving critical dimension uniformity of wafer
  • Method and device for improving critical dimension uniformity of wafer

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Embodiment Construction

[0019] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0020] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only It is an embodiment of a part of the application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts shall fall within the scope of protection of this application.

[0021] It should be noted that the terms "first" and "second...

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Abstract

The invention provides a method and a device for improving the critical dimension uniformity of a wafer. The method comprises the following steps: acquiring first temperature distribution on the surface of a wafer in a drying process after coating; predicting second temperature distribution in the post-exposure drying process according to the first temperature distribution, wherein drying equipment adopted in the post-coating drying process and drying equipment adopted in the post-exposure drying process are manufactured by adopting the same process; and compensating exposure energy in an exposure process according to the second temperature distribution, and exposing the wafer by adopting the compensated exposure energy so as to improve the critical dimension uniformity of the wafer. The drying equipment adopted in the post-coating drying process and the drying equipment adopted in the post-exposure drying process are manufactured by adopting the same process, so that the second temperature distribution can be predicted by adopting the first temperature distribution, and the exposure energy in the exposure process is compensated according to the second temperature distribution; and the critical dimension uniformity of the wafer is improved.

Description

technical field [0001] The present application relates to the field of semiconductors, in particular, to a method, device, wafer, computer-readable storage medium and lithography equipment for improving the uniformity of critical dimensions of a wafer. Background technique [0002] In the 3D NAND process, the storage capacity per unit area is increased by continuously increasing the number of layers of NO (N refers to silicon nitride, O refers to silicon dioxide), and the 3D step structure ensures The contact hole can be smoothly connected to the gate line of each layer of NO, and there are complex material filling and annealing processes in the 3D NAND process. The design and process of 3D NAND cause the wafer to undergo huge deformation due to stress, and it changes continuously during the entire process, making it difficult to control. [0003] If the wafer becomes too large and irregular, it will cause the wafer to not be absorbed smoothly on the drying equipment of the...

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70558G03F7/70491Y02P70/50
Inventor 徐文超吴振国杨超
Owner YANGTZE MEMORY TECH CO LTD
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