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Semiconductor structure

A semiconductor and conductive plug technology, applied in the direction of semiconductor devices, semiconductor/solid-state device components, electric solid-state devices, etc., can solve problems such as influence, and achieve the effect of good performance

Pending Publication Date: 2022-03-29
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003]However, in the actual application process, the arrangement of the interconnection structure will cause damage to the components located on the surface of the silicon wafer and the components located in the dielectric layer on the silicon wafer Influence

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  • Semiconductor structure
  • Semiconductor structure
  • Semiconductor structure

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Embodiment Construction

[0028] refer to figure 1 and figure 2 , figure 1 is a schematic cross-sectional view of a semiconductor structure, figure 2 for figure 1 Top view of the semiconductor structure shown. The semiconductor structure includes: a substrate 10 and a dielectric layer 11 on the substrate 10 ; a conductive plug 12 , and the conductive plug 12 is located in the substrate 10 and the dielectric layer 11 .

[0029] The conductive plug 12 usually includes a metal material, and the metal material is prone to expansion and contraction when subjected to thermal stress. When the thermal expansion coefficient of the conductive plug 12 is different from that of the dielectric layer 11 and the substrate 10 , a stress concentration phenomenon will occur, thereby causing deformation of the substrate 10 and the dielectric layer 11 . The deformation of the substrate 10 and the dielectric layer 11 may affect the characteristics of the functional elements in the functional area, and even cause str...

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Abstract

The embodiment of the invention provides a semiconductor structure. The semiconductor structure comprises a substrate and a dielectric layer located on the substrate, the first part of the conductive plug is located in the substrate, and the second part of the conductive plug is located in the dielectric layer; and the capacitor array at least surrounds the second part of the conductive plug. According to the embodiment of the invention, the influence of deformation stress generated by the conductive plug on the functional element is reduced.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular, to a semiconductor structure. Background technique [0002] In the prior art, in order to realize the integration and assembly of chips in the Z-axis direction, the interconnection between chips is usually realized by a through-silicon via technology (Through-Silicon Vias, TSV). Specifically, through-silicon via technology is to form a through hole connecting the upper and lower sides of the wafer, and fill the through hole with conductive material to form an interconnection structure. Wherein, the conductive material includes different types of metal materials. [0003] However, in a practical application process, the arrangement of the interconnection structure will affect the components located on the surface of the silicon wafer and the components located in the dielectric layer on the silicon wafer. Contents of the invention [0004] The embodiment o...

Claims

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Application Information

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IPC IPC(8): H01L23/522H01L23/528
CPCH01L23/5222H01L23/528H01L23/522
Inventor 吴秉桓刘杰
Owner CHANGXIN MEMORY TECH INC
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