Integrated circuit device and electronic system including the same
A technology of integrated circuits and devices, applied in the field of electronic systems, can solve the problems of chip area limitation, two-dimensional storage device integration limitation and influence, etc.
Pending Publication Date: 2022-03-29
SAMSUNG ELECTRONICS CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
Because the degree of integration of a two-dimensional memory device depends on the area occupied by a unit memory cell, it may be affected by the level of fine pattern formation technology
However, expensive equipment can be used to form fine patterns, and the area of the chip die may be limited, so the increase in the integration of 2D memory devices will be limited
Method used
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Embodiment Construction
[0020] Hereinafter, some example embodiments of the inventive concept will be described in detail with reference to the accompanying drawings.
[0021] figure 1 is a block diagram of an integrated circuit device 10 according to some embodiments of the inventive concept.
[0022] refer to figure 1 , the integrated circuit device 10 may include a memory cell array 20 and a peripheral circuit 30 .
[0023] The memory cell array 20 may include a plurality of memory cell blocks BLK1, BLK2, . . . , BLKn (where n is an integer of 3 or more). The plurality of memory cell blocks BLK1, BLK2, . . . , BLKn may each include a plurality of memory cells. The plurality of memory cell blocks BLK1, BLK2, . . . , BLKn may be connected to the peripheral circuit 30 through bit lines BL, word lines WL, string selection lines SSL, and ground selection lines GSL.
[0024] The memory cell array 20 may be connected to a page buffer 34 through a bit line BL, and may be connected to a row decoder 32 ...
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An integrated circuit device and an electronic system including the same are provided. The integrated circuit device may include: a gate stack extending on the substrate in a first direction that may be parallel to a main surface of the substrate, the gate stack including a plurality of gate electrodes overlapping each other in a vertical direction that may be perpendicular to the main surface of the substrate; a channel structure, the channel structure extending through the gate stack in the vertical direction; a word line cutting opening extending through the gate stack in the vertical direction and extending in the first direction; and an upper support layer on the gate stack, and including a hole overlapping the word line cutting opening in the vertical direction. And the upper surface of the channel structure is in contact with the lower surface of the upper supporting layer.
Description
[0001] Cross References to Related Applications [0002] This application is based on and claims the benefit of priority from Korean Patent Application No. 10-2020-0124070 filed with the Korean Intellectual Property Office on September 24, 2020, the disclosure of which is incorporated herein by reference in its entirety. technical field [0003] The inventive concept relates to an integrated circuit device and an electronic system including the integrated circuit device, and more particularly, to an integrated circuit device including a nonvolatile vertical memory device and an electronic system including the nonvolatile vertical memory device. Background technique [0004] Increasing the integration of integrated circuit devices can be beneficial, both in terms of performance and manufacturing cost. Since the degree of integration of a two-dimensional memory device depends on the area occupied by a unit memory cell, it may be affected by the level of fine pattern formation ...
Claims
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IPC IPC(8): H01L27/11582H01L27/1157H01L27/11556H01L27/11524
CPCH10B41/35H10B41/27H10B43/35H10B43/27H10B41/50H10B43/50H01L29/792H01L29/788H01L21/76877H01L23/481H10B41/10H10B41/40H10B43/10H10B43/40
Inventor 宋炫周李海旻
Owner SAMSUNG ELECTRONICS CO LTD