Three-dimensional memory and preparation method thereof

A memory and three-dimensional technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as the complex structure of three-dimensional memory, and achieve the effect of avoiding wafer warping and leakage problems

Pending Publication Date: 2022-04-05
YANGTZE MEMORY TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] As the requirements for storage density continue to increase, the number of layers in the stacked structure continues to increase, and the structure of the three-dimensional m

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  • Three-dimensional memory and preparation method thereof
  • Three-dimensional memory and preparation method thereof
  • Three-dimensional memory and preparation method thereof

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[0029] The present disclosure will be described in detail below with reference to the accompanying drawings. The exemplary embodiments mentioned herein are only used to explain the present disclosure, but not to limit the scope of the present disclosure. Throughout the specification, the same reference numerals refer to the same elements.

[0030] In the drawings, the thickness, size and shape of components have been slightly adjusted for ease of illustration. The drawings are examples only and are not drawn strictly to scale. As used herein, the terms "approximately," "approximately," and similar terms are used to denote approximations, rather than degrees, and are intended to describe measured or calculated values ​​that would be recognized by one of ordinary skill in the art inherent bias in .

[0031] It will also be understood that the expression "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "comprising", ...

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Abstract

The invention relates to a three-dimensional memory and a preparation method thereof. The method comprises the following steps of: forming an etching stop layer and a sacrificial layer which are adjacent to each other in a direction parallel to the substrate on the substrate; forming a laminated structure on the etching stop layer and the sacrificial layer; forming a channel structure penetrating through the laminated structure to the sacrificial layer; removing the substrate and the sacrificial layer to expose an end portion of the channel structure; removing a portion of the functional layer of the channel structure to expose a channel layer of the channel structure; and forming a lead-out structure in contact with the channel layer. According to the preparation method of the three-dimensional memory, the problem of electric leakage caused by etching of the virtual channel in the preparation process can be avoided, and the electrical performance and the product yield of the three-dimensional memory are improved.

Description

technical field [0001] The present disclosure relates to the field of semiconductor design and manufacturing, and more specifically, to the structure of a three-dimensional memory and its manufacturing method. Background technique [0002] The core area of ​​the three-dimensional memory may be composed of a stacked structure including multiple gate layers and multiple dielectric layers, and a channel structure passing through the stacked structure. The portion of the channel structure corresponding to the gate layer and the corresponding gate layer can form a memory cell. Some gate layers of the stacked structure can be used as control gates for controlling the memory cells to realize the memory function. [0003] As the requirements for storage density continue to increase, the number of layers in the stacked structure continues to increase, and the structure of the three-dimensional memory becomes more and more complex. Processes such as the formation of step structures ...

Claims

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Application Information

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IPC IPC(8): H01L27/1157H01L27/11575H01L27/11582H01L25/18H01L21/60
CPCH01L2224/08145
Inventor 张坤
Owner YANGTZE MEMORY TECH CO LTD
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