Light emitting diode and preparation method thereof
A technology of light-emitting diodes and connecting electrodes, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., and can solve the problems of restricting luminous efficiency, uneven current diffusion, and reduced light-emitting area area
Pending Publication Date: 2022-04-05
XIAMEN SANAN OPTOELECTRONICS CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
Among them, when the light-emitting diode is driven by a large current, the problem of uneven current diffusion during high-current drive is usually achieved by adjusting the spacing of the N-type through holes, but the improper spacing of the N-type through holes will lead to a reduction in the area of the light-emitting area, which restricts the luminous efficiency.
Method used
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[0016] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them.
[0017] refer to Figure 1 to Figure 4 , The light emitting diode according to the embodiment of the present application includes: a substrate 110, a semiconductor stack 120 disposed on the substrate 110, a first connection electrode 161 and a second connection electrode 162 disposed on the semiconductor stack 120; and a metal layer, for example The metal layer 140 is disposed on the semiconductor stack 120 . The semiconductor stack 120 may include a first semiconductor layer 121, an active layer 122, and a second semiconductor layer 123, and the firs...
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Abstract
The invention provides a light-emitting diode, and the light-emitting diode comprises a semiconductor lamination layer which comprises a first semiconductor layer, an active layer, a second semiconductor layer, and a plurality of through holes which extend from the second semiconductor layer to a part of the first semiconductor layer through the active layer, and the first semiconductor layer, the active layer and the second semiconductor layer are sequentially laminated; wherein the plurality of through holes comprise a first group of through holes and a second group of through holes, the first group of through holes comprise a plurality of through holes formed in the first side and / or the third side of the light emitting diode, and the first group of through holes are arranged at intervals in the first direction; the second group of through holes comprises a plurality of through holes formed in a second side and / or a fourth side of the light emitting diode, and the second through holes are arranged at intervals in a second direction perpendicular to the first direction; the first group of through holes and the second group of through holes are arranged in an aligned manner, and the inner side through holes surrounded by the first group of through holes and the second group of through holes are arranged in a non-aligned manner in the first direction and / or the second direction.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode and a preparation method thereof. Background technique [0002] Light emitting diode (light emitting diode, referred to as LED) is a semiconductor device that uses carrier recombination to release energy to form light. In particular, the flip-chip LED chip has the advantages of free wiring, high luminous efficiency, and good heat dissipation. more and more widely. [0003] At present, flip-chip light-emitting diodes have the characteristics of high current resistance, so that the application of light-emitting diodes has been extended from conventional lighting to rail transit applications. The prospect is huge and the future market demand will be further released. Among them, when the light-emitting diode is driven by a large current, the uneven current diffusion problem during high-current driving is usually achieved by adjusting the spacing of the...
Claims
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Login to View More IPC IPC(8): H01L33/38H01L33/46H01L33/32H01L33/00
Inventor 韩涛黄禹杰陈剑斌臧雅姝
Owner XIAMEN SANAN OPTOELECTRONICS CO LTD