Check patentability & draft patents in minutes with Patsnap Eureka AI!

Diode transfer method and diode transfer device

A transfer method and transfer device technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve problems such as disorderly arrangement and reduced spacing of micro-light-emitting diodes, and achieve the effect of expanding the gap

Pending Publication Date: 2022-04-08
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide a diode transfer method and a diode transfer device, which can solve the existing technical problems such as the reduction of the spacing of the micro-light emitting diodes during the transfer process and the disorderly arrangement.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diode transfer method and diode transfer device
  • Diode transfer method and diode transfer device
  • Diode transfer method and diode transfer device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application. In addition, it should be understood that the specific implementations described here are only used to illustrate and explain the present application, and are not intended to limit the present application. In this application, unless stated to the contrary, the used orientation words such as "up" and "down" usually refer to up and down in the actual use or working state of the device, specifically the direction of the drawing in the drawings ; while "inside" and "outside" refer to the outline of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a diode transfer method and a diode transfer device, and the method comprises the following steps: providing a pickup device which is provided with a flexible circuit layer and a heating expansion layer; the pickup device picks up a diode chip; and the temperature of the heated expansion layer is increased through heating, the heated expansion layer drives the flexible circuit layer to extend after expanding, and the distance between the diode chips is increased. The technical effect of the invention is that the large-quantity transfer target of enlarging the distance between the diodes and orderly arranging the diodes is realized.

Description

technical field [0001] The present application relates to the display field, in particular to a diode transfer method and a diode transfer device. Background technique [0002] Compared with the existing liquid crystal display panel technology, micro-light-emitting diodes have higher resolution, higher contrast, faster response and lower energy consumption. They are a new generation of display technology with great potential. [0003] In the current technology, micro-light emitting diodes can only be grown on the substrate by epitaxy first, and after the preparation is completed, a huge amount of micro-light-emitting diodes are transferred to the display substrate through a transfer operation to form an array structure according to certain rules. [0004] However, it is a technical difficulty to be solved to control tens of thousands of micro-light-emitting diodes to perform "mass transfer" accurately. In the epitaxial growth, the pitch of the micro-LEDs is small, which doe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/15H01L33/00H01L33/62
Inventor 王雪琴
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com