A femtosecond laser direct writing method for zinc oxide micro-nano patterns

A technology of micro-nano pattern and femtosecond laser, which is applied in the direction of microlithography exposure equipment, photoplate making process of pattern surface, optics, etc., can solve the problems of low manufacturing efficiency, complicated process and high production cost

Active Publication Date: 2022-07-19
ZHEJIANG LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The excellent performance of zinc oxide makes it have broad application prospects in semiconductors, sensing and other fields. At present, zinc oxide thin films are mainly produced by magnetron sputtering. When specific patterns are required, a mask plate is required or combined with traditional lithography. This method needs to draw the pattern through the mask plate, the process is complicated, the manufacturing efficiency is low, the pattern accuracy is low, and the production cost is high

Method used

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  • A femtosecond laser direct writing method for zinc oxide micro-nano patterns
  • A femtosecond laser direct writing method for zinc oxide micro-nano patterns
  • A femtosecond laser direct writing method for zinc oxide micro-nano patterns

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Dissolve 0.5 g of zinc methacrylate into 10 g of propylene glycol monomethyl ether, add 5 mg of two-photon initiator DETC, ultrasonicate for 20 minutes to promote dissolution, and filter twice with a 0.22 μm filter to obtain a zinc-based photoresist A.

[0043] The zinc-based photoresist A was dropped onto the glass substrate, spin-coated at a speed of 500 rpm for 10 s, and then spin-coated at a speed of 2,000 rpm for 60 s to obtain a thin film of the zinc-based photoresist A.

[0044] Writing with a 780 nm femtosecond laser induces the polymerization of monomers at selected positions in the zinc-based photoresist film by changing the position of the laser focus.

[0045] After the writing was completed, it was developed in PGMEA for 40 s, and then developed in isopropanol for 5 min to obtain the inscribed pattern.

[0046] The obtained patterns were annealed in air atmosphere for 120 min, the annealing temperature was 500 ℃, the heating rate during annealing was 20 ℃ / ...

Embodiment 2

[0050] Dissolve 0.75 g of zinc methacrylate into 10 g of propylene glycol monomethyl ether, add 7.5 mg of two-photon initiator DETC, ultrasonicate for 20 minutes to promote dissolution, and filter twice with a 0.22 μm filter to obtain a zinc-based photoresist B.

[0051] The zinc-based photoresist B was dropped onto the glass substrate, spin-coated at a speed of 500 rpm for 10 s, and then spin-coated at a speed of 2,000 rpm for 60 s to obtain a thin film of the zinc-based photoresist B.

[0052] Writing with a 780 nm femtosecond laser induces the polymerization of monomers at selected positions in the zinc-based photoresist film by changing the position of the laser focus.

[0053] After the writing is completed, develop in PGMEA for 2 min, and then develop in isopropanol for 5 min to obtain the inscribed pattern.

[0054] The obtained pattern was annealed in air atmosphere for 60 min, the annealing temperature was 700 ℃, the heating rate during annealing was 20 ℃ / min, and th...

Embodiment 3

[0057] Dissolve 1 g of zinc methacrylate into 10 g of propylene glycol monomethyl ether, add 10 mg of two-photon initiator DETC, ultrasonicate for 20 minutes to promote dissolution, and filter twice with a 0.22 μm filter to obtain a zinc-based photoresist C.

[0058] The zinc-based photoresist C was dropped onto the glass substrate, spin-coated at a speed of 500 rpm for 10 s, and then spin-coated at a speed of 2,000 rpm for 60 s to obtain a thin film of the zinc-based photoresist C.

[0059] Writing with a 780 nm femtosecond laser induces the polymerization of monomers at selected positions in the zinc-based photoresist film by changing the position of the laser focus.

[0060] After the writing is completed, develop it in PGMEA for 1 min, and then develop it in isopropanol for 5 min to obtain the written pattern.

[0061] The obtained pattern was annealed in air atmosphere for 30 min, the annealing temperature was 1000 ℃, the heating rate during annealing was 20 ℃ / min, and t...

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Abstract

Zinc oxide is a semiconductor material that can be used in light-emitting diodes, photoelectric sensors and other fields. The invention discloses a femtosecond laser direct writing method of zinc oxide micro-nano patterns. The position of the polymer is polymerized, and the designed pattern is formed after development. The obtained pattern is annealed at high temperature in an air atmosphere to obtain the micro-nano pattern of zinc oxide. Rapid fabrication of photoelectric sensing devices.

Description

technical field [0001] The invention belongs to the field of micro-nano structure manufacturing, in particular to a femtosecond laser direct writing method of zinc oxide micro-nano patterns. Background technique [0002] Zinc oxide is a broadband semiconductor material with high transparency and pressure-sensitive properties. It can absorb ultraviolet rays and emit light at room temperature. It is used in liquid crystal displays, thin film transistors, photoelectric sensors, pressure-sensitive devices and other products. [0003] Femtosecond laser direct writing technology is a micro-nano processing technology that uses a focused femtosecond pulsed laser as a light source. Under the irradiation of femtosecond laser, the two-photon initiator will exhibit nonlinear optical effect, absorb two or more photons at the same time, and generate free radicals to initiate polymerization. Compared with the traditional lithography technology, the photoresist is exposed by changing the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/76G03F7/20
Inventor 夏贤梦曹春沈小明邱毅伟关玲玲匡翠方
Owner ZHEJIANG LAB
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