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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of short service life and low luminous efficiency of QLED

Pending Publication Date: 2022-04-12
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, due to the selection and adaptation of each functional layer of QLED has not yet reached the optimum, although th

Method used

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  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0034] The preparation method of the above quantum point light emitting diode is as follows:

[0035] The PEDOT: PSS solution is rotated on the ITO glass substrate 800 to form a hole injection layer 600, and after the spin-coated hole injection layer 600, it can also treat 0.1 to 6 h at 60 to 250 ° C to remove the hole injection layer 600. Among the residual solvents avoid the effects of subsequent preparation processes. Specifically, the temperature is typically in the range of 100 to 200 ° C, which may be 100 ° C, 120 ° C, 140 ° C, 150 ° C, 170 ° C or 200 ° C; treatment time is generally from 0.1 to 2 h, may be 0.1H, 0.3H, 0.5 H, 0.8H, 1.2H or 2H; then the organic solution of the hole transporting material of the hole injection layer 600 is then formed to form a hole transport layer 500; after the surface of the hole transport layer 500 is derivatized. The organic solution of the object forms an electronic barrier layer 400, and after the spin coating is formed, the electron blo...

Example Embodiment

[0040] Example 1

[0041] This embodiment provides a quantum dot light emitting diode, and the preparation method thereof is as follows:

[0042] (1) Pedot: PSS solution in the ITO glass substrate 800, PEDOT: PSS solution forms a hole injection layer 600, and heat treatment at 150 ° C for 30 min after completion of the spin coating.

[0043] (2) 8 mg of TFB was completely dissolved in 1 mL of chlorobenzene, and the TFB chlorobenzene solution was applied to the surface of the hole injection layer 600 in the surface of the hole injection layer 600 at a rate of 3000 rpm / min.

[0044] (3) 30 mg of 4,4'-cyclohexyl group 2 [N, N-di (4-methylphenyl) aniline] is completely dissolved in 1 mL of chlorobenzene solution, and then 4,4'-cyclohexyl [N, N-di (4-methylphenyl) aniline] The chlorobenzene solution is applied to the surface of the hole transport layer 500 in the surface of the hole transport layer 500 in the surface of the hole transport layer 500, and the spin coating is 150 ° C. T...

Example Embodiment

[0048] Example 2

[0049] This embodiment provides a quantum dot light emitting diode, and the preparation method thereof is compared to the first embodiment, the main difference is:

[0050] In step (3), 4,4'-cyclohexyl group 2 [N, N-di (4-ethylphenyl) aniline is used for 4,4'-cyclohexylidel [N, N-b) using the same mass of 4,4'-cyclohexylideidin. 4-methylphenyl) aniline] prepared electron blocking layer 400;

[0051] In step (4), the quantum dot light-emitting layer 300 is prepared using a CDSE / ZnS (green) quantum point solution.

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Abstract

The embodiment of the invention provides a quantum dot light-emitting diode and a preparation method thereof, and relates to the field of light-emitting diodes. The quantum dot light-emitting diode comprises a hole injection layer, a hole transport layer, an electron blocking layer, a quantum dot light-emitting layer and an electron transport layer which are sequentially arranged in a stacked mode, and the electron blocking layer is made of triphenylamine derivatives. The quantum dot light-emitting diode is high in light-emitting efficiency and long in service life.

Description

technical field [0001] The present application relates to the field of light emitting diodes, in particular, to a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum Dot Light Emitting Diodes (QLEDs) have great commercial potential due to their good color purity. Existing QLEDs usually consist of electrodes, electron injection layer and electron transport layer (electron transport layer, ETL), hole injection layer and hole transport layer (hole transport layer, HTL), quantum dot light-emitting layer and other functional layers according to specific stacked in sequence. After QLED is energized, electrons and holes respectively pass through the functional layers on both sides of the quantum dot light-emitting layer to reach the quantum dot light-emitting layer, and recombine and emit light in the quantum dot light-emitting layer. [0003] At present, due to the fact that the selection and adaptation of each functional laye...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 乔之勇程陆玲孙笑丁云
Owner 合肥福纳科技有限公司
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