Equalization circuit structure and manufacturing method thereof, and sensing amplification and storage circuit structure
A technology of balanced circuit and manufacturing method, which is applied in the fields of balanced circuit structure and its manufacture, sense amplifier circuit structure and storage circuit structure, which can solve the problems of difficult manufacturing of wiring layers and difficulty of reducing wiring size, and achieve area saving, The effect of reducing the difficulty of process manufacturing and reducing the number of traces
Pending Publication Date: 2022-04-19
CHANGXIN MEMORY TECH INC
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Problems solved by technology
[0003] However, with the development of the process, the size of the transistor becomes smaller and the number of traces remains the same. It becomes more and more difficult to reduce the size of the traces. manufacture
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[0041] In order to facilitate the understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the application are given in the drawings. However, the present application can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of this application more thorough and comprehensive.
[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are only for the purpose of describing specific embodiments, and are not intended to limit the application.
[0043] It will be understood that when an element or layer is referred to as being "on," "adjacent," "con...
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The invention relates to an equalization circuit structure, a manufacturing method thereof, a sensing amplification circuit structure and a storage circuit structure. The equalization circuit structure comprises the components of a semiconductor substrate which comprises an equalization active region; the grid layer comprises a grid pattern and a power line, the grid pattern is located on the equalization active region and used for forming a transistor unit with the equalization active region, and the power line is electrically connected with the equalization active region and an external power supply and used for providing power for the transistor unit. The embodiment of the invention can effectively reduce the process manufacturing difficulty of the wiring layer.
Description
technical field [0001] The present application relates to the technical field of integrated circuits, in particular to an equalization circuit structure and a manufacturing method thereof, a sense amplifier circuit structure and a storage circuit structure. Background technique [0002] When reading the stored logic potential of the memory cell, a sense amplifier circuit is usually required to amplify and read the signal on the bit line connected to the memory cell and the complementary bit line. The equalization circuit is an important part of the sense amplifier circuit. During the precharge phase of the read process, the individual transistors in the equalization circuit are turned on so that the bit line and the complementary bit line have the same intermediate potential. In a traditional sense amplifier circuit structure, a wiring layer is usually provided, so that various wirings including the power line of the equalization circuit are arranged through the wiring laye...
Claims
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IPC IPC(8): H01L23/522G11C7/12H01L23/528H01L23/538
CPCG11C7/12H01L23/5286H01L23/5283H01L23/5226H01L23/5386G11C11/4091G11C11/4094G11C5/025H01L21/823871H01L27/0207H01L27/092H10B12/50H01L23/485H01L21/76895G11C7/06H01L21/8234H01L23/528H01L23/538H01L27/088
Inventor 赵阳车载龙
Owner CHANGXIN MEMORY TECH INC