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Silicon material melting degree monitoring method, storage medium, terminal and crystal pulling equipment

A melting degree and silicon material technology, applied in image analysis, instrumentation, calculation, etc., can solve problems such as unavailable images, complex image content, monitoring failure, etc., achieve flexible threshold setting, easy popularization and application, and accurate judgment of melting state Effect

Active Publication Date: 2022-04-22
TZTEK TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, during the process of melting the silicon material, the solution itself will produce a strong light; at the same time, due to the influence of argon gas filling, crucible rotation, crucible growth, etc., there is a certain degree of fluctuation on the surface of the melt, so the pixel value of the image Comparison cannot effectively characterize the process state of silicon melting
During the melting process, the silicon material has various forms, coupled with the irradiation of bright light and the reflection of the light by the melt, the content of the image is very complicated, and the edge representation information of the image of the melting state of the silicon material is not accurate
The image histogram has a good inhibitory effect on the small melt movement, but it cannot distinguish the change of the melting state of the silicon material from the motion noise caused by the flow and movement of the melt, especially in the later stage of the melting process of the silicon material.
These lead to the difficulties of traditional image processing, and even the problem of unusable images
[0005] Therefore, in view of the image characteristics of silicon material melting, it is necessary to further explore reliable and accurate monitoring methods for silicon material melting state, so as to avoid the problem of low precision of traditional monitoring methods that lead to monitoring failure

Method used

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  • Silicon material melting degree monitoring method, storage medium, terminal and crystal pulling equipment
  • Silicon material melting degree monitoring method, storage medium, terminal and crystal pulling equipment
  • Silicon material melting degree monitoring method, storage medium, terminal and crystal pulling equipment

Examples

Experimental program
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no. 1 example

[0037] A method for monitoring the melting degree of silicon material based on differential image processing, the method comprising:

[0038] S1. Acquire multiple images inside the crystal furnace by adjusting different exposure degrees of the camera.

[0039] S2. Calculate the differential image g(x, y), and obtain the current frame image by subtracting the previous nth frame image that has a large difference from the current frame. The obtained differential image is as follows figure 2 shown.

[0040] S3, through differential image dynamic threshold segmentation, see image 3 , get the difference region R. Specifically, the method for obtaining the difference region R in step S3 includes:

[0041] S31. Perform large kernel filtering on the differential image g(x, y) to obtain image g t (x,y), see Figure 4 As shown by the dotted line of , the gray scale of the enhanced area is consistent; the difference image g(x, y) is denoised by small kernel filtering to obtain the ...

no. 2 example

[0055] The present invention also provides a computer-readable storage medium, on which computer instructions are stored, and the steps of the aforementioned method are executed when the computer instructions are executed. Wherein, for the method, please refer to the detailed introduction in the foregoing part, and details will not be repeated here.

[0056] Those of ordinary skill in the art can understand that all or part of the steps in the various methods of the above-mentioned embodiments can be completed by instructing related hardware through a program, and the program can be stored in a computer-readable storage medium, and the computer-readable medium includes a permanent Both non-permanent and non-permanent, removable and non-removable media can be implemented by any method or technology for information storage. Information may be computer readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are...

no. 3 example

[0058] The present invention also provides a terminal, including a memory and a processor, and the memory stores a preset ratio threshold Thr ratio and computer instructions executable on the processor, and the processor performs the steps of the foregoing method when executing the computer instructions. Wherein, for the method, please refer to the detailed introduction in the foregoing part, and details will not be repeated here.

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Abstract

The invention provides a silicon material melting degree monitoring method, a storage medium, a terminal and crystal pulling equipment, and belongs to the field of semiconductors, the method is based on image difference, an unmelted silicon material area A1 and a current frame image bright view area A2 are obtained, and the silicon material melting state is judged according to the ratio of the two areas and a threshold value; the crystal pulling equipment comprises a furnace body, a rotary crucible, a crystal pulling unit, a state monitoring unit, a feeder and a controller, good differential images can be obtained under the condition of different temperatures and brightness views, threshold setting is flexible, melting state judgment is accurate, and application and popularization in the field of semiconductor manufacturing are facilitated.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a method for monitoring the melting degree of silicon material, a storage medium, a terminal and crystal pulling equipment. Background technique [0002] Monocrystalline silicon is currently the starting material for the semiconductor industry, so its quality control is particularly important. In the process of preparing single crystal silicon, the melting control of silicon material is an important part of crystal growth. The detection of the melting state of the silicon material is helpful to analyze the progress of the melting process. During the melting process, it is necessary to carry out multiple feedings. In the process of multiple feedings, it is necessary to adjust the heating power and select the appropriate feeding timing according to the melting state of the silicon material. Therefore, the detection of the melting process of silicon material has important...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06T7/00G06T7/62
CPCG06T7/001G06T7/62
Inventor 何开振董志文杨君庄再城胡方明纪步佳杨国炜纪昌杰曹葵康薛峰
Owner TZTEK TECH