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Bulk acoustic wave resonator, method for manufacturing same, filter, and electronic device

A bulk acoustic wave resonator and resonator technology, applied in the direction of electrical components, impedance networks, etc., can solve the problems that cannot meet the requirements of high-frequency communication

Pending Publication Date: 2022-04-22
ROFS MICROSYST TIANJIN CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Traditional RF filters are limited by structure and performance, and cannot meet the requirements of high-frequency communication

Method used

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  • Bulk acoustic wave resonator, method for manufacturing same, filter, and electronic device
  • Bulk acoustic wave resonator, method for manufacturing same, filter, and electronic device
  • Bulk acoustic wave resonator, method for manufacturing same, filter, and electronic device

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Embodiment Construction

[0026] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention. Some, but not all, embodiments of the invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

[0027] figure 1 is a schematic top view of a bulk acoustic wave resonator, figure 2 for along figure 1 A schematic cross-sectional view taken along the line L-L in ; Figure 5 to be similar to figure 1 A schematic...

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Abstract

The present invention relates to a bulk acoustic wave resonator comprising: a substrate; an acoustic mirror; a bottom electrode; a piezoelectric layer; and a top electrode, wherein: the surface roughness of the bottom electrode and / or the top electrode is Rqlt; the wavelength is 0.5 nm; and / or in a cross section parallel to the thickness direction of the resonator, the distance between the highest point and the lowest point on the surface, in contact with the piezoelectric layer, of the bottom electrode and / or the top electrode in the thickness direction is smaller than 5nm. The invention further relates to a manufacturing method of the bulk acoustic wave resonator, the resonator comprises the substrate, the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode, and the method comprises the step of preparing all or part of the electrode film layer of the top electrode and / or the bottom electrode under the condition that the deposition power range is larger than 1 KW. The invention also relates to a filter and an electronic device.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator and a manufacturing method thereof, a filter and an electronic device. Background technique [0002] With the increasing development of 5G communication technology, the requirements for communication frequency bands are getting higher and higher. Due to the limitation of structure and performance, traditional radio frequency filters cannot meet the requirements of high frequency communication. As a new type of MEMS device, film bulk acoustic resonator (FBAR) has the advantages of small size, light weight, low insertion loss, wide frequency bandwidth and high quality factor, which is well adapted to the upgrading of wireless communication systems, making FBAR technology It has become one of the research hotspots in the field of communication. [0003] The structural body of the film bulk acoustic resonator is a "sandwich" str...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/007H03H3/02H03H9/17H03H9/46H03H9/48H03H9/56
CPCH03H3/0075H03H3/02H03H9/174H03H9/175H03H9/462H03H9/485H03H9/564H03H2003/023H03H2003/025H03H2003/027
Inventor 庞慰李葱葱徐洋梁兴宇张孟伦
Owner ROFS MICROSYST TIANJIN CO LTD
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