Manufacturing method of cross section sample of transmission electron microscope
A technology of transmission electron microscope and manufacturing method, which is applied in the preparation of test samples, material analysis using radiation, material analysis using wave/particle radiation, etc. Semiconductor chip failure analysis and other issues to avoid the effect of curtain effect
Pending Publication Date: 2022-05-06
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0007] The object of the present invention is to provide a kind of preparation method of TEM cross-section sample, to solve the TEM imaging quality of TEM cross-section sample caused by the TEM imaging quality poor due to the TEM cross-section sample formed in the prior art is prone to bending and curtain effect, thus causing Unable to accurately perform failure analysis on semiconductor chips
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[0053] The preparation method of the transmission electron microscope section sample proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific examples. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.
[0054] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the pl...
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Abstract
The invention provides a manufacturing method of a transmission electron microscope section sample. According to the manufacturing method provided by the invention, before the plane sample is etched, the transition protection layer with a certain thickness is formed on the to-be-etched surface of the plane sample, so that the transition protection layer is used as an effective support for a follow-up etching process, and the purpose that the shape of the cross section sample of the transmission electron microscope formed in the etching process is special is further realized; and the problem that the cross section sample of the transmission electron microscope is easy to bend is solved. Moreover, according to the manufacturing method of the transmission electron microscope section sample provided by the invention, the bottom surface of the plane sample is etched to form the section sample, so that only a semiconductor substrate made of a single material is formed on the bottom surface of the plane sample; the problem that the TEM image quality is reduced due to the curtain effect caused by cutting different materials by the ion beam in the prior art is solved, namely, the accuracy and the efficiency of failure analysis of the semiconductor chip are finally improved.
Description
technical field [0001] The invention relates to the technical field of failure analysis of semiconductor chips, in particular to a method for preparing a section sample of a transmission electron microscope. Background technique [0002] With the gradual reduction of the feature size of semiconductor devices, the 14nm process node requires a higher treatment TEM image to check the program file. Therefore, it is necessary to improve the quality of the TEM image. The appropriate sample carrier is FIB (Focused Ion Beam) / One of the necessary conditions for TEM sample preparation. [0003] At present, focused ion beams are commonly used in the field of failure analysis in the semiconductor chip manufacturing industry to prepare TEM samples, mark and repair circuits. With the reduction and complexity of the semiconductor manufacturing process, many structures in the chip are becoming more and more fine, and it is difficult to accurately locate the failure location by conventiona...
Claims
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IPC IPC(8): G01N1/28G01N23/20008G01N23/02
CPCG01N1/28G01N23/20008G01N23/02
Inventor 钱迎沈仁慧高金德
Owner SHANGHAI HUALI MICROELECTRONICS CORP