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Low dark count rate semiconductor structure

A technology of photosensitive semiconductor and shielding structure, which is applied in the direction of semiconductor devices, sustainable manufacturing/processing, climate sustainability, etc. It can solve the problems that it is difficult to determine the real DCR of ordinary photodiodes and become negative

Pending Publication Date: 2022-05-13
X FAB GLOBAL SERVICES GMBH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the light shield itself will affect the DCR, so it is difficult to determine the true DCR of a common photodiode
If the determined DCR is too high, the regulated output from the photodiode can go negative in low light settings

Method used

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Embodiment Construction

[0010] One source of higher DCR is surface damage to the silicon by the plasma process during fabrication. For DCR, the most vulnerable parts of SPAD or APD are the multiplication and depletion regions around the pn junction. Therefore, the portion of the pn junction closest to the silicon surface (ie, the edge of the pn junction) is critical for improving DCR. Metal and to some extent polycrystalline (polysilicon) on or above the silicon surface shield the energetic particles of the plasma from the surface, but surface damage can still occur which increases the DCR.

[0011] figure 1 A schematic cross-section of a part of a semiconductor structure 2 , eg in a SPAD or APD, is shown. The semiconductor structure comprises a pn junction 4 having a central portion 6 and an edge portion 8 surrounding the central portion 6 . The central part 6 of the pn junction is usually rectangular (eg square), but may also have other shapes, eg circular. The edge portion 8 is the portion of ...

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Abstract

A photosensitive semiconductor structure includes: a pn junction in a silicon substrate, the pn junction including a central portion and an edge portion surrounding the central portion, the edge portion being in contact with a surface of the silicon substrate; and a plasma shielding structure covering at least a depletion width of the pn junction over at least a portion of the edge portion, where the edge portion is in contact with the surface of the silicon substrate.

Description

technical field [0001] The present invention relates to low dark count rate semiconductor structures, such as low dark count rate semiconductor structures for single photon avalanche diodes (SPADs). Background technique [0002] For photodiodes, and especially for single-photon detectors such as single-photon avalanche diodes (SPADs) and avalanche photodiodes (APDs), a low dark count rate (DCR) is important for good performance, especially in low light Environment. DCR sets a limit on the lowest light intensity that can be reliably detected. [0003] DCR is a measure of the incidence of detection events due to charge carriers not excited by incident light (usually thermally excited charge carriers), and can be achieved by covering one or more photodiodes with a light shield to block all incident light. determined by the light on the photodiode. Once the DCR is known, it can be subtracted from the output of a normal photodiode. However, the light shield itself will affect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/0216H01L31/0352
CPCH01L31/107H01L31/0352H01L31/02161H01L31/1804H01L31/035281Y02P70/50H01L29/0646H01L31/109
Inventor 丹尼尔·盖布勒尔
Owner X FAB GLOBAL SERVICES GMBH
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