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A method of correcting the influence of temperature on sipm gain

A technology for correcting temperature and corresponding relationship, applied in the field of radiation detection, can solve problems such as difficulty in accurate monitoring, and achieve the effect of reducing circuit complexity, improving system efficiency, and improving system stability

Active Publication Date: 2019-06-25
JIANGSU SUPERSENSE TECH CO LTD
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Problems solved by technology

The difficulty with this approach is that the SiPM dark count signal is typically only a few millivolts and only slightly above the baseline noise signal in low noise circuits, making accurate monitoring of its magnitude inherently difficult

Method used

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  • A method of correcting the influence of temperature on sipm gain
  • A method of correcting the influence of temperature on sipm gain
  • A method of correcting the influence of temperature on sipm gain

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Embodiment Construction

[0029] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, wherein the schematic embodiments and descriptions are only used to explain the present invention, but are not intended to limit the present invention.

[0030] See attached figure 1 , which shows a circuit structure diagram of the present invention for correcting the influence of temperature on SiPM gain, and the circuit structure includes a SiPM detector, a SiPM signal processing circuit and a SiPM bias circuit. Based on the circuit structure, the method of the present invention will be described in detail below.

[0031] (1) First, the SiPM detector output analog voltage signal to the SiPM signal processing circuit, the SiPM signal processing circuit has a high-speed high-precision (sampling rate 1GHz, effective sampling accuracy 11bit) ADC and an FPGA, the ADC's The input dynamic range is 0-1V, and the ADC digitizes the analog voltage sign...

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Abstract

The invention relates to a method for correcting temperature influence to SiPM gain. According to the method of the invention, a dark count rate in an SiPM output signal is obtained through calculation according to an SiPM dark count measuring algorithm. A fixed relation between the dark count rate and the SiPM working temperature is utilized for determining the current temperature of the SiPM. Furthermore a to-be-regulated working bias increment parameter of the SiPM is determined based on the current temperature of the SiPM, thereby effectively correcting temperature influence to the SiPM gain, improving system stability, reducing hardware cost and improving system efficiency.

Description

【Technical field】 [0001] The invention belongs to the technical field of radiation detection, and in particular relates to a new method for correcting the influence of temperature on the gain of a SiPM (silicon photonmultiplier). 【Background technique】 [0002] With the development of semiconductor technology, the new silicon-based photon detector SiPM has made rapid progress. Compared with the traditional PMT (photon multiplier tuber), SiPM has many advantages, such as: magnetic field insensitivity, small size, high position resolution, and low working bias voltage. Therefore, it has broad application prospects in many research directions involving radiation detection, including high-energy physics experiments, cosmic ray observations, nuclear medical imaging, and nuclear safety. But SiPM also has some disadvantages, such as dark count and temperature effect. The temperature effect mainly means that the gain of the SiPM will change with its own temperature, which will cau...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01T7/00G01T1/24
CPCG01T1/248G01T7/00
Inventor 王忠海刘飞李磊薛会
Owner JIANGSU SUPERSENSE TECH CO LTD
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