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Imaging system

A single-photon avalanche and diode technology, applied in the field of imaging systems, can solve problems such as the inability to determine the distance from the image sensor to the object being imaged, low image quality and resolution, etc.

Pending Publication Date: 2021-08-06
SEMICON COMPONENTS IND LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Conventional image sensors can suffer from limited functionality in several ways
For example, some conventional image sensors may not be able to determine the distance from the image sensor to the object being imaged
Conventional image sensors can also have lower than desired image quality and resolution

Method used

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Embodiment Construction

[0019] Embodiments of the invention relate to imaging systems that include single photon avalanche diode (SPAD) based sensors.

[0020] Some imaging systems include image sensors that sense light by converting impinging photons into accumulated (harvested) electrons or holes in pixel photodiodes within the sensor array. After completion of the accumulation period, the collected charge is converted into a voltage, which is provided to the output terminal of the sensor. In complementary metal-oxide-semiconductor (CMOS) image sensors, the charge-to-voltage conversion is done directly in the pixel itself, and the analog pixel voltage is transferred to the output terminal through various pixel addressing and scanning schemes. The analog pixel voltages can also then be converted to digital equivalents on-chip and processed in various ways in the digital domain.

[0021] On the other hand, in single-photon avalanche diode (SPAD) devices, the principle of photon detection is differen...

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PUM

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Abstract

The invention relates to an imaging system. A semiconductor device may include a plurality of single-photon avalanche diodes (SPADs). The semiconductor device may include sensing single-photon avalanche diodes that are sensitive to incident light and dark single-photon avalanche diodes that are shielded from incident light. The dark single-photon avalanche diodes may be used to measure one or more parameters for the semiconductor device such as breakdown voltage, dark count rate, and quench resistance. A processing circuitry may optimize a bias voltage for the semiconductor device based on information regarding one or more sensor parameters obtained using the dark single-photon avalanche diodes.

Description

[0001] This application claims the benefit of U.S. Provisional Patent Application No. 62 / 963,658, filed January 21, 2020, which is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates generally to imaging systems, and more particularly, to imaging systems including single photon avalanche diodes (SPADs) for single photon detection. Background technique [0003] Modern electronic devices such as cellular telephones, cameras, and computers often use digital image sensors. An image sensor (sometimes called an imager) may be formed from an array of two-dimensional image sensing pixels. Each pixel typically includes photosensitive elements, such as photodiodes, that receive incident photons (incident light) and convert the photons into electrical signals. [0004] Conventional image sensors can suffer from limited functionality in a number of ways. For example, some conventional image sensors may not be able to determine the d...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14609H01L27/1461H01L27/14643H04N25/70G01J1/44G01J2001/442G01J2001/4466G01J2001/444
Inventor J·莱德维纳I·考达尔达里乌斯·皮奥特·帕鲁比克
Owner SEMICON COMPONENTS IND LLC
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