A single photon avalanche diode detector structure and manufacturing method thereof

Abstract

The invention discloses a single-photon avalanche photoelectric diode detector structure which comprises a P-type silicon substrate, a deep N well and a deep P well, wherein the deep N well and the deep P well are formed in the P-type silicon substrate; an N<+> zone and a P<+> zone for forming a multiplication zone for absorbing photons are formed in the deep N well; a first P well zone and an N well zone for forming an avalanche photoelectric diode structure are formed around the multiplication zone; an anode lead-out end is formed in the N well zone; a cathode lead-out end is formed in the P<+> zone; a second P well zone is formed in the deep P well; a substrate lead-out end is formed in the second P well zone; the surfaces of the deep N well and the deep P well are covered by protectionlayers. The single-photon avalanche photoelectric diode detector structure is simple in structure, only two PN junctions are formed in a vertical direction of a junction depth, a PN junction isolation mode is adopted in a whole unit structure, dark count rates caused by defects of STI can be completely eliminated, the unit area can be greatly reduced, and the filling rate can be increased. The invention further discloses a producing method of the single-photon avalanche photoelectric diode detector structure.

Description

technical field [0001] The present invention relates to the technical field of detectors, in particular to a single photon avalanche diode detector structure and a manufacturing method thereof. Background technique [0002] Single photon detection is a detection method of extremely weak light. The photocurrent intensity of the light detected by it is lower than the thermal noise level (10-14W) of the photodetector itself at room temperature. It is impossible to extract the signal which is buried in the noise. Single-photon detection in high-resolution spectroscopy, non-destructive material analysis, high-speed phenomenon detection, precision analysis, atmospheric pollution measurement, bioluminescence, radiation detection, high-energy physics, astrophotometry, optical time-domain reflectometry, quantum key distribution systems and other fields have a wide range of applications. [0003] The devices currently used in single photon detection mainly include: photomultiplier t...

AI Technical Summary

Problems solved by technology

Although it adopts layout technology to reduce dark counts, it cannot fundamentally solve the dark counts caused by defects in STI

To reduce the dark count caused by defects in the STI, only increase the spacing between the STI and the multiplication region, thus increasing the area of ​​the entire unit

In addition, its single-photon avalanche diode structure has four PN junctions along the junction depth direction. Although the time resolution and blue light response can be improved, the implementation process is complicated, and the concentration gradient distribution of the four PN junctions is difficult to control. Device consistency and repeatability are difficult to guarantee

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