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Capacitor and semiconductor device including same

A technology of capacitors and semiconductors, applied in the direction of fixed capacitor electrodes, fixed capacitor dielectrics, capacitors, etc., can solve problems such as difficult to drive devices

Pending Publication Date: 2022-05-31
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this case, a large amount of leakage current may flow through the dielectric layer of the capacitor, so it may be difficult to drive the device

Method used

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  • Capacitor and semiconductor device including same
  • Capacitor and semiconductor device including same
  • Capacitor and semiconductor device including same

Examples

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Embodiment Construction

[0020] Reference will now be made in detail to embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the embodiments may have different forms and should not be construed as being limited to the descriptions set forth herein. Accordingly, the embodiments are merely described below, by referring to the figures, to explain aspects. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of," when preceding a list of elements, modify the entire list of elements and do not modify the individual elements of the list.

[0021] In the following description, the terms are used only to illustrate specific embodiments while not limiting the scope of the present disclosure. When an element is referred to as being "on" or "on" another element, it can be directly on, under, or directly on the ...

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PUM

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Abstract

The invention provides a capacitor and a semiconductor device including the same. A capacitor includes: a first electrode; a second electrode spaced apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include: a base material including an oxide of a base metal, the base material having a dielectric constant of about 2 to about 70; and a co-dopant including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and / or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and / or Bi.

Description

technical field [0001] The present disclosure relates to a semiconductor device such as a capacitor and a semiconductor device including the semiconductor device. Background technique [0002] As electronic devices are scaled down, the space available for semiconductor devices in electronic devices is also decreasing. Therefore, semiconductor devices such as capacitors are required to be small in size and have thin dielectric layers. However, in this case, a large amount of leakage current may flow through the dielectric layer of the capacitor, so it may be difficult to drive the device. Contents of the invention [0003] Provided are a dielectric layer having high permittivity and low leakage current, a semiconductor device including the dielectric layer, and a semiconductor device including the semiconductor device. [0004] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learne...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L49/02H01L27/108H01G4/12H01G4/30
CPCH01L28/40H01L28/90H01G4/30H01G4/1209H10B12/315H01G4/33H01G4/012H01G4/008H01G4/40H01G4/085H01G4/1218H01G4/1236H01L27/016H10B12/0335H01L28/55H01L28/65H01L29/792
Inventor 李载昊赵龙僖张胜愚朴影根李周浩
Owner SAMSUNG ELECTRONICS CO LTD