Composite high-voltage PMOS (P-channel Metal Oxide Semiconductor) tube
A high-voltage, control circuit technology, applied in the direction of reliability improvement and revision, reliability improvement of field effect transistors, pulse technology, etc., can solve problems such as integrated circuit damage, and achieve low production costs, simple control circuits, and small Rdson resistance Effect
Pending Publication Date: 2022-06-03
南京市智凌芯科技股份有限公司
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Problems solved by technology
[0008] Purpose of the invention: The purpose of the present invention is to provide a composite high-voltage PMOS transistor to solve the problem that when the input operating voltage has a large voltage transient fluctuation, it will be transmitted to the output port and the subsequent integrated circuit will be destroyed.
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[0026] The technical solutions of the present invention will be further described below with reference to the accompanying drawings.
[0027] Depend on figure 1 It can be seen that the composite high-voltage PMOS tube of the present invention includes a high-voltage Depletion NMOS tube and a conventional medium-low voltage PMOS tube. The drain of the NMOS is the input terminal of the composite high-voltage PMOS tube, the source of the NMOS is connected to the source of the PMOS tube, the drain of the PMOS tube is the output end of the composite high-voltage PMOS tube, and the gate of the NMOS is the second control terminal of the composite high-voltage PMOS tube, The gate of the PMOS is the first control terminal of the composite high-voltage PMOS transistor. The first control terminal is controlled by the control circuit 1 , and the second control terminal is controlled by the control circuit 2 .
[0028] In this embodiment, the control circuit 2 of the second control termi...
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The invention discloses a composite high-voltage PMOS (P-channel Metal Oxide Semiconductor) tube which comprises an NMOS (N-channel Metal Oxide Semiconductor) tube and a PMOS tube, a drain electrode of the NMOS is an input end of the composite high-voltage PMOS tube, a source electrode of the NMOS is connected with a source electrode of the PMOS tube, a drain electrode of the PMOS tube is an output end of the composite high-voltage PMOS tube, a grid electrode of the PMOS is a first control end of the composite high-voltage PMOS tube, and a grid electrode of the NMOS is a second control end of the composite high-voltage PMOS tube. The power supply has excellent anti-input voltage interference performance; a required control circuit is simple and stable; compared with a conventional high-voltage PMOS (P-channel Metal Oxide Semiconductor), the composite high-voltage PMOS provided by the invention has the advantages that the Rdson resistance is smaller, and the production cost is low.
Description
technical field [0001] The invention relates to a composite switch tube, in particular to a composite high-voltage PMOS tube. Background technique [0002] In the conventional 5V CMOS process, the basic devices are PMOS / NMOS / resistor / capacitor, and then the biased analog process generally provides Depletion NMOS / ISO NMOS and Zener devices; with the process development and circuit design needs, small resistance and VDS resistance High-voltage DMOS has also been developed, and even the NPN / PNP tube of the original BIPOLAR process can be provided, and the process has also been upgraded from the conventional 5V CMOS process to the high-voltage BCD process. [0003] With the rapid development of the integrated circuit industry and the increase of application environments, the system puts forward higher and higher reliability requirements for the integrated circuits used. [0004] In terms of linear analog integrated circuits, the reliability requirements are mainly concentrated ...
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IPC IPC(8): H03K19/003H03K19/094
CPCH03K19/00315H03K19/094
Inventor 林立谨杨全谷申
Owner 南京市智凌芯科技股份有限公司