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High-linearity radio frequency power amplifier

A technology of radio frequency power and high linearity, applied in high frequency amplifiers, power amplifiers, improved amplifiers to reduce nonlinear distortion, etc., can solve problems such as debugging difficulties, achieve convenient control, simple structure, and improve design and debugging efficiency Effect

Active Publication Date: 2022-06-28
MAXSCEND MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional high-linearity power amplifiers mostly use an adaptive linearization bias circuit structure, and the circuit parameters of the adaptive linearization bias circuit structure are often given at the time of design, so an additional debugging structure needs to be designed, which brings It is extremely difficult and often requires multiple debugging iterations to converge performance

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Embodiment Construction

[0020] In order to make the purpose, technical solutions and advantages of the present application more clearly understood, the present application will be described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, but not to limit the present application.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are for the purpose of describing specific embodiments only, and are not intended to limit the application. It should be noted that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or connected to the other element through interveni...

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Abstract

The invention relates to a high-linearity radio frequency power amplifier, which comprises an amplifying circuit and a biasing circuit, the biasing circuit comprises more than two self-adaptive linearization biasing circuits, and each self-adaptive linearization biasing circuit is connected with a corresponding control power supply and is connected with the amplifying circuit; and the respective adaptive linearization bias circuits are configured with different circuit parameters. More than two self-adaptive linearization bias circuits with different circuit parameters are configured for the amplification circuit, dynamic adjustment of linearity indexes of the radio frequency power amplifier can be realized only by adjusting the size and ratio of the control power supply corresponding to each self-adaptive linearization bias circuit, and the radio frequency power amplifier is simple in structure, convenient to control and low in cost. And the design and debugging efficiency of the high-linearity radio frequency power amplifier is effectively improved.

Description

technical field [0001] The present application relates to the technical field of radio frequency front ends, and in particular, to a high linearity radio frequency power amplifier. Background technique [0002] With the popularization of smart mobile terminals and 5G technology, radio frequency communication systems require far higher data transmission rates than previous cellular data and lower network delays. Therefore, more complex modulation techniques are applied, making radio frequency signals more Appears as a non-constant envelope signal with a peak-to-average ratio. Therefore, in order for the RF power amplifier to achieve efficient transmission of signals in 5G applications, the linear power of the RF power amplifier must be increased. [0003] The radio frequency power amplifier can be divided into two parts, the first part is the amplifier circuit structure for power amplifying the radio frequency signal, and the second part is the bias circuit part which contro...

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Application Information

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IPC IPC(8): H03F1/32H03F3/21H03F3/19
CPCH03F1/32H03F3/21H03F3/19Y02D30/70
Inventor 刘文永刘鑫海谷远辉孙洪铮
Owner MAXSCEND MICROELECTRONICS CO LTD