Unlock instant, AI-driven research and patent intelligence for your innovation.

Nano-metal induced etching method for glass substrate

A glass substrate and nano-metal technology, applied in the field of semiconductors, can solve the problem of uncontrollable overall thickness of glass

Pending Publication Date: 2022-07-01
广东佛智芯微电子技术研究有限公司
View PDF9 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Based on this, in order to solve the problem that the existing laser-assisted etching method of through-glass holes will cause the overall thickness of the glass substrate to be thinned during the etching process, resulting in an uncontrollable overall thickness of the glass, the present invention provides a nano-metal-induced etching method for the glass substrate. Its specific technical scheme is as follows:

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano-metal induced etching method for glass substrate
  • Nano-metal induced etching method for glass substrate
  • Nano-metal induced etching method for glass substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] like figure 1 As shown, a nano-metal induced etching method for a glass substrate, which comprises the following steps:

[0037] S1, the glass substrate 1 is provided.

[0038] S2, set a mask plate 2 on the surface of the glass substrate 1, such as figure 2 shown.

[0039] Preferably, before the mask plate 2 is arranged on the surface of the glass substrate, the surface of the glass substrate is pretreated to ensure the cleaning of the surface of the glass substrate. Specifically, the pretreatment methods include acid washing, alkali washing and drying.

[0040] S3, the mask plate 2 is opened to obtain a preset pattern, such as image 3 shown.

[0041] S4, depositing a layer of nano-metal 4 in the hole 3 of the mask plate 2, such as Figure 4 shown.

[0042] S5, the glass substrate is etched with an etching solution, such as Figure 5 shown.

[0043] As a preferred technical solution, when the glass substrate is etched with an etching solution, ultrasonic vibr...

Embodiment 2

[0048] A nano-metal induced etching method for a glass substrate, comprising the following steps:

[0049] S1, the glass substrate 1 is provided.

[0050] S2 , setting a mask plate 2 on the surface of the glass substrate 1 .

[0051] Preferably, before the mask plate 2 is arranged on the surface of the glass substrate, the surface of the glass substrate is pretreated to ensure the cleaning of the surface of the glass substrate. Specifically, the pretreatment methods include acid washing, alkali washing and drying.

[0052] Preferably, the mask plate 2 is made of a material that has the function of absorbing and storing etchant and having corrosion resistance. Specifically, the material includes, but is not limited to, tetrafluorolon, polyethylene, polypropylene, or organic resin.

[0053] S3, the mask plate 2 is opened to obtain a preset pattern. After the preset pattern is obtained, the residual mask 2 material generated during the hole opening process is cleaned.

[005...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a nano-metal induced etching method for a glass substrate. The nano-metal induced etching method comprises the following steps: S1, providing the glass substrate; s2, arranging a mask plate on the surface of the glass substrate; s3, opening holes in the mask plate to obtain a preset pattern; s4, depositing a layer of nano metal in the hole of the mask plate; s5, etching the glass substrate through an etching solution; s6, the mask plate is removed, the glass substrate is cleaned, and etching is completed. According to the method, the overall thinning of the glass substrate in the etching process can be effectively prevented, and the problem that the overall thickness of the glass is uncontrollable due to the fact that the overall thinning of the glass substrate is caused in the etching process in an existing laser-assisted glass through hole etching method is solved.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and specifically to a nanometal-induced etching method for a glass substrate. Background technique [0002] Since the introduction of Moore's Law, integrated circuits have developed rapidly in accordance with Moore's Law. That is, when the price remains unchanged, the number of components that can be accommodated on an integrated circuit will double approximately every 18-24 months, and the performance will also increase. Double the improvement. The size of integrated circuits has been reduced to the nanometer level, and when it gradually approaches its physical limit, the method of reducing feature size can no longer further improve the performance and functionality of integrated circuits. However, the demand in the microelectronics market continues to grow, and the development of integrated circuits faces a series of problems and challenges. [0003] Three-dimensional integrati...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C03C15/00
CPCC03C15/00
Inventor 杨斌刘宇华显刚崔成强林挺宇
Owner 广东佛智芯微电子技术研究有限公司