Preparation method of ultrathin silicon dioxide passivation layer
A technology of silicon dioxide and passivation layer, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve the problems of uncontrollable thickness and poor compactness of silicon dioxide film, and achieve the solution of thickness Uncontrollable, low adhesion, high damage tendency effect
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Embodiment 1
[0033] refer to figure 1 , SiO2 + different H passivation time (10s ~ 180s):
[0034] S1. Select 7 pieces of N type single crystal silicon wafers as samples.
[0035] S2. The silicon wafer is uniformly cleaned with 25% KOH to remove the damaged layer of 30 μm and the standard RCA method, and then soaked in 1% HF for 180s to remove the surface oxide layer of the silicon wafer.
[0036] S3, soak the cleaned sample in concentrated HNO 3 Medium, 121°C, heated in an oil bath for 10 minutes.
[0037] S4, grow SiO on both sides 2 The sample is put into the PECVD chamber, and the H 2 Double-sided passivation is carried out, and the parameters are shown in Table 1.
[0038] Table 1 PECVD passivation parameters
[0039]
[0040] S5. Measure the effective minority carrier lifetime of the sample with a minority carrier lifetime measuring instrument, the measurement parameters are shown in Table 2, and the analysis model is quasi-steady-state photoconductivity (QSS).
[0041] Tab...
Embodiment 2
[0045] refer to figure 2 (b) Sample 2 in:
[0046] S1. Select three N type single crystal silicon wafers as samples.
[0047] S2. The silicon wafer is uniformly cleaned with 25% KOH to remove the damaged layer of 30 μm and the standard RCA method, and then soaked in 1% HF for 180s to remove the surface oxide layer of the silicon wafer.
[0048] S3, soak the cleaned sample in concentrated HNO 3 Medium, 121°C, heated in an oil bath for 10 minutes.
[0049] S4. Use a minority carrier lifetime measuring instrument to measure the effective minority carrier lifetime of the sample. The analysis model is QSS, and the concentration of the specified minority carrier lifetime is 1E14cm -3 , and other measurement parameters are shown in Table 2.
[0050] S5. Record the measured minority lifetime results, and take the average value of 1.41 μs as a control group.
Embodiment 3
[0052] refer to figure 2 In (c) sample 3:
[0053] S1. Select three N type single crystal silicon wafers as samples.
[0054] S2. The silicon wafer is uniformly cleaned with 25% KOH to remove the damaged layer of 30 μm and the standard RCA method, and then soaked in 1% HF for 180s to remove the surface oxide layer of the silicon wafer.
[0055] S3, grow SiO on both sides 2 The sample is put into the PECVD chamber, and the H 2 Perform double-sided passivation, the radio frequency time is 30s, and other parameters are shown in Table 1.
[0056] S4. Use a minority carrier lifetime measuring instrument to measure the effective minority carrier lifetime of the sample. The analysis model is QSS, and the specified minority carrier lifetime concentration is 1E16cm -3 , and other measurement parameters are shown in Table 2.
[0057] S5. Record the measured minority lifetime results, and take the average value of 85 μs as a control group.
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