Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor wafer polishing device capable of completely removing annular oxide layer

A technology that completely removes and polishes the device. It is used in semiconductor/solid-state device manufacturing, grinding/polishing equipment, and manufacturing tools. It can solve problems such as low polishing efficiency and incomplete removal of annular oxide layers, and achieve the effect of improving quality.

Inactive Publication Date: 2022-07-05
徐州领测半导体科技有限公司
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The traditional local polishing equipment focuses on polishing the end face, the annular oxide layer on the front and back sides is not completely removed, and the remaining part is mainly removed during the fine polishing process, which makes the polishing efficiency low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor wafer polishing device capable of completely removing annular oxide layer
  • Semiconductor wafer polishing device capable of completely removing annular oxide layer
  • Semiconductor wafer polishing device capable of completely removing annular oxide layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0040] see Figure 1 to Figure 6 In the embodiment of the present invention, the semiconductor wafer polishing apparatus 100 that can completely remove the annular oxide layer includes: a base 10, a frame 20, an upper polishing mechanism 30, a lower polishing mechanism 40, an end surface polishing mechanism 50, a suction cup 60 and a rotary Motor 70. The suction cup 60 is used for sucking and fixing the semiconductor wafer 200 . The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a semiconductor wafer polishing device capable of completely removing an annular oxide layer. The semiconductor wafer polishing device comprises a base, a rack, an upper polishing mechanism, a lower polishing mechanism, an end face polishing mechanism, a suction cup used for adsorbing and fixing a semiconductor wafer and a rotating motor used for driving the suction cup to rotate so as to drive the semiconductor wafer to rotate. The rack is fixed above the base; the upper polishing mechanism and the end face polishing mechanism are installed on the rack. The lower polishing mechanism and the rotating motor are mounted on the base; the diameter of the sucker is smaller than that of the semiconductor wafer; the semiconductor wafer is located on the sucker and the sucker adsorbs the middle part of the semiconductor wafer; the semiconductor wafer polishing device capable of completely removing the annular oxide layer has an end face polishing state and an edge polishing state. The method has the beneficial effect that the annular oxide layers on the front side and the back side can be completely removed in the local polishing process.

Description

technical field [0001] The invention relates to a semiconductor wafer polishing device which can completely remove the annular oxide layer. Background technique [0002] In the semiconductor manufacturing process, the polishing of the wafer usually needs to go through the following steps: [0003] 1. Rough polishing, that is, polishing the front and back sides of the wafer at the same time. [0004] 2. A ring-shaped oxide layer is formed on the front and back sides of the semiconductor wafer respectively, and the ring-shaped oxide layer covers the outer circumference area of ​​the front and back sides of the semiconductor wafer near the edge; [0005] 3. Partial polishing, that is, performing local mirror polishing on the edge of the wafer and removing the annular oxide layer at the same time. [0006] 4. Fine polishing, that is, mirror polishing the front or both sides of the wafer. [0007] The traditional local polishing equipment focuses on polishing the end face, and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B27/033B24B41/06B24B41/02B24B27/00B24B57/02H01L21/3105
CPCB24B27/033B24B41/068B24B41/02B24B27/0076B24B57/02H01L21/31053
Inventor 吴龙军
Owner 徐州领测半导体科技有限公司