Semiconductor process equipment

Abstract

The invention provides semiconductor process equipment, which comprises a process chamber and an electrostatic chuck arranged in the process chamber, and is characterized in that a plurality of salient points are arranged on the bearing surface of the electrostatic chuck and are used for supporting a wafer; the equipment further comprises a charge eliminating device and a grounded sheet taking part. Wherein the charge eliminating device comprises an elastic conductive part, and when the elastic conductive part is placed on the plurality of salient points and when the electrostatic chuck is electrified, the elastic conductive part can generate elastic deformation under the action of electrostatic force so as to be in contact with the bearing surface of the electrostatic chuck, so that residual charges on the bearing surface are transferred; the sheet taking part is used for placing the elastic conductive part on the plurality of salient points or taking away the elastic conductive part from the plurality of salient points; and the sheet taking part is grounded. According to the semiconductor process equipment provided by the invention, the residual charge on the bearing surface of the electrostatic chuck can be quickly eliminated, and the process chamber does not need to be opened.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular, to a semiconductor process equipment. Background technique [0002] In the PVD (Physical Vapor Deposition, physical vapor deposition) process, an electrostatic chuck is usually used to fix the wafer. At the same time, the electrostatic chuck also has the function of heating the wafer to maintain the wafer temperature at a preset process temperature until The process is over. Moreover, in order to improve the heat exchange efficiency between the electrostatic chuck and the wafer, it is necessary to pass gas between the electrostatic chuck and the wafer, and maintain a certain pressure, and realize the heat exchange between the electrostatic chuck and the wafer through the gas. . With the use of the electrostatic chuck, residual charge will accumulate on the surface of the electrostatic chuck. However, due to the uncontrollable residual charge, it is often unevenl...

AI Technical Summary

Problems solved by technology

However, the process temperature of the PVD process is generally 200°C to 400°C, and it usually takes 6 to 8 hours to cool down to room temperature, and it takes a long time to raise the temperature in the chamber to the process temperature after the residual charge is eliminated. time; it can be seen that although the traditional method of eliminating the residual charge on the surface of the electrostatic chuck is simple, it takes a long time and seriously affects the process efficiency of the chamber

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