Single crystal manufacturing system and single crystal manufacturing method

Abstract

The present invention addresses the problem of providing a single crystal production system and a single crystal production method which are capable of preventing calculation errors and setting errors of a correction amount and of reflecting an appropriate correction amount in the next batch. A single crystal production system (1) is provided with: a single crystal pulling device (10) for obtaining a diameter measurement value of a single crystal in a single crystal pulling step performed by the CZ method, obtaining a first diameter of the single crystal by correcting the diameter measurement value using a diameter correction coefficient, and controlling the diameter of the single crystal on the basis of the first diameter; a diameter measuring device (50) that measures the diameter of the single crystal pulled up by the single crystal pulling device (10) at room temperature and obtains a second diameter of the single crystal; and a database server (60) that acquires and manages the first diameter and the second diameter from the single crystal pulling device (10) and the diameter measuring device (50), respectively. The database server (60) calculates a correction amount for the diameter correction coefficient on the basis of the first diameter and the second diameter at the diameter measurement positions that match at room temperature, and corrects the diameter correction coefficient using the correction amount.

Description

technical field [0001] The invention relates to a single crystal manufacturing system and a single crystal manufacturing method based on the Czochralski method (CZ method), in particular to a control system and a control method for the diameter of a single crystal. Background technique [0002] Most of the single crystal silicon used as the substrate material of the semiconductor device is produced by the CZ method. In the CZ method, a quartz crucible is filled with a polycrystalline silicon raw material, and the raw material is heated in a chamber to form a silicon melt. Next, the seed crystal was lowered from above the quartz crucible and immersed in the silicon melt, and the seed crystal was slowly raised while rotating the seed crystal and the quartz crucible, whereby a large single crystal was grown below the seed crystal. According to the CZ method, the production yield of large-diameter single crystal silicon can be improved. [0003] A single crystal ingot is manuf...

AI Technical Summary

Problems solved by technology

In this way, the target diameter of the single crystal ingot must be larger than the wafer diameter of the final product, but if it is too large, the grinding and grinding costs will increase and become uneconomical

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