Data processing method, controller and system

A data processing and controller technology, applied in the semiconductor field, can solve problems such as wear leveling, and achieve the effect of ensuring accuracy and reducing the difficulty of distinguishing

Pending Publication Date: 2022-07-22
YANGTZE MEMORY TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Solid State Disk (SSD) mainly uses Nand Flash as its permanent storage medium, and records 0 and 1 through potential level or phase state difference. It has fast read and write speed, small size, light weight, and low power consumption. , Good shock resistance, but due to the limitation of the number of Nand Flash programming and erasing operations (Program and Erase, PE), it is necessary to perform wear leveling operations on it to ensure that the PE times of all physical blocks in the Nand Flash are balanced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Data processing method, controller and system
  • Data processing method, controller and system
  • Data processing method, controller and system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of this application.

[0044] It should be understood that the technical solutions of the present application can be applied to various communication systems, such as: Global System of Mobile communication (GSM), Code Division Multiple Access (CDMA) system, wideband code division multiple access (Wideband Code Division Multiple Access Wireless, WCDMA), General Packet Radio Service (General Packet Radio Service, GPRS), Long Term Evolution (Long Term Evolution, LTE) and the l...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a data processing method, a controller and a system. The data processing method comprises the following steps: receiving first data information sent by a host end; the first data information at least comprises cold and hot attribute information of data; determining first cold data based on the cold and hot attribute information in the first data information, and updating a cold data address table based on the first cold data; the cold data address table at least comprises a mapping relation between the first cold data and a storage block address of the first cold data; judging whether the data in the cold data address table is cold data or not according to a preset period to obtain a first judgment result; and updating the cold data address table based on the first judgment result.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a data processing method, controller and system. Background technique [0002] Solid State Disk (SSD) mainly uses flash memory (Nand Flash) as its permanent storage medium, records 0 and 1 through potential level or phase state difference, and has the advantages of fast read and write speed, small size, light weight and low power consumption. , The characteristics of good shock resistance, but due to the limitation of the number of Nand Flash programming and erasing operations (Program and Erase, PE), it is necessary to perform a wear leveling operation to ensure that the PE times of all physical blocks in the Nand Flash are balanced. One of the ways to achieve wear leveling is to separate all blocks from hot and cold, that is, to store data (hot data) with a higher frequency of write operations in blocks with a lower number of PEs, while storing data with a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0638G06F3/0679
Inventor 胡海洋
Owner YANGTZE MEMORY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products