Epitaxial wafer, preparation method of epitaxial wafer and light emitting diode chip

A technology of light-emitting diodes and epitaxial wafers, applied in semiconductor devices, electrical components, circuits, etc., can solve the problem that photons cannot escape, and achieve the effect of reducing total reflection ratio and improving luminous efficiency.

Pending Publication Date: 2022-07-22
HC SEMITEK ZHEJIANG CO LTD
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Problems solved by technology

[0005] The embodiments of the present disclosure provide an epitaxial wafer, a preparation method of the epitaxial wafer, and a light-emitting diode chip, which can improve the problem that photons cannot escape due to total reflection at the junction of the sapphire substrate and the epitaxial layer, and improve the efficiency of light-emitting diodes. luminous efficiency

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  • Epitaxial wafer, preparation method of epitaxial wafer and light emitting diode chip

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[0035] In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0036] Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," "third," and similar terms used in the description and claims of the presently disclosed patent application do not denote any order, quantity, or importance, but are merely used to distinguish the different components . Likewise, "a" or "an" and the like do not denote a quantitative limitation, but rather denote the presence of at least one. Words like "include" or "include" mean that the elements or items appearing before "including" or "including" cover the elements or items listed after "including" or "including" and the...

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Abstract

The invention provides an epitaxial wafer, a preparation method of the epitaxial wafer and a light-emitting diode chip, and belongs to the technical field of photoelectron manufacturing. The epitaxial wafer comprises a sapphire substrate and an epitaxial layer, wherein the epitaxial layer is positioned on the surface of the sapphire substrate; the surface, close to the epitaxial layer, of the sapphire substrate is provided with a plurality of protruding structures, the protruding structures are arranged at intervals, and the refractive index of the protruding structures is between the refractive index of the sapphire substrate and the refractive index of the epitaxial layer. The problem that photons cannot escape due to the fact that the photons form total reflection at the junction of the sapphire substrate and the epitaxial layer can be solved, and the light-emitting efficiency of the light-emitting diode is improved.

Description

technical field [0001] The present disclosure relates to the technical field of optoelectronic manufacturing, and in particular, to an epitaxial wafer, a method for preparing the epitaxial wafer, and a light-emitting diode chip. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, LED for short) is a very influential new product in the optoelectronics industry. It has the characteristics of small size, long service life, colorful colors and low energy consumption. It is widely used in lighting and display screens , signal lights, backlights, toys and other fields. The core structure of an LED is an epitaxial wafer, and the fabrication of the epitaxial wafer has a great influence on the optoelectronic properties of the LED. [0003] In the related art, a GaN-based LED usually includes a sapphire substrate and an epitaxial layer stacked on the sapphire substrate, and the material of the epitaxial layer grown on the sapphire substrate is usually G...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/22H01L33/00
CPCH01L33/22H01L33/0075H01L33/0066
Inventor 李鹏兰叶
Owner HC SEMITEK ZHEJIANG CO LTD
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