Stacked semiconductor device and method of manufacturing the same

Abstract

The invention provides a stacked semiconductor device and a method of manufacturing the same. The stacked semiconductor device includes: a substrate; a first transistor formed on the substrate and including a first active region surrounded by a first gate structure and a first source / drain region; and a second transistor stacked on the first transistor and including a second active region surrounded by a second gate structure and a second source / drain region, where the first active region and the first gate structure are in vertical mirror symmetry with the second active region and the second gate structure, respectively, with respect to a dummy plane therebetween.

Description

technical field [0001] Apparatuses and methods consistent with example embodiments of the inventive concept relate to stacked semiconductor devices, and more particularly, to structures of stacked semiconductor devices having mirror-symmetrical structures. Background technique [0002] The increasing demand for miniaturization of semiconductor devices has introduced fin field effect transistors (finFETs) beyond planar structure transistors, and further, nanosheet transistors, also known as multi-bridge channel FETs (MBCFETs). Both finFETs and nanosheet transistors are referred to as gate-all-around transistors because the structure they provide for the current path is wrapped or surrounded by the gate structure. [0003] In order to concentrate semiconductor devices including finFETs or nanosheet transistors driving larger amounts of current in a limited layout area, three-dimensional stacked device structures have been investigated. However, simple stacking or stacking of ...

AI Technical Summary

Problems solved by technology

However, simple stacking or stacking of two semiconductor devices may not reduce the area by at least 50% due to the middle-of-the-line (MOL) structure that directly or indirectly connects the lower-stacked transistors to the upper-stacked transistors.

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