GaN-based LED epitaxial structure, preparation method thereof and light-emitting diode

Abstract

The invention relates to the field of semiconductors, and discloses a GaN-based LED epitaxial structure, a preparation method thereof and a light emitting diode, the epitaxial structure comprises a substrate (101), and an nGaN layer (104), a quantum well layer (106) and a pGaN layer (109) which grow on the substrate in sequence; a low-temperature pGaN layer (107) also grows between the quantum well layer and the pGaN layer, and the low-temperature pGaN layer is formed by alternately growing a trimethyl gallium sub-layer (1071) with relatively high carbon impurity content and a triethyl gallium sub-layer (1072) with relatively low carbon impurity content. Compared with the prior art, the low-temperature PGaN layer is formed in the mode that the trimethyl gallium and the triethyl gallium alternately grow, the content of carbon impurities in the low-temperature PGaN layer is reduced, the resistivity of the low-temperature PGaN is reduced, the forward voltage of the light-emitting diode is further reduced, and the light-emitting efficiency of the light-emitting diode is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a GaN-based LED epitaxial structure, a preparation method thereof, and a light-emitting diode. Background technique [0002] A GaN (gallium nitride)-based LED (Light Emitting Diode) generally includes an epitaxial wafer and electrodes prepared on the epitaxial wafer. like figure 1 As shown, the epitaxial wafer generally includes: a substrate, and a GaN-based epitaxial layer grown on the substrate, the epitaxial layer includes a buffer layer, an undoped GaN layer, an N-type GaN layer, a stress release layer, and a quantum well stacked in sequence layer, low temperature P-type GaN layer, PAlGaN layer, P-type GaN layer and contact layer. When a current is injected into the GaN-based LED, electrons in the N-type region such as the N-type GaN layer and holes in the P-type region such as the P-type GaN layer enter the active region of the quantum well layer and recombine, emitting visib...

AI Technical Summary

Problems solved by technology

[0003] In practical application, the existing technology has at least the following problems: in the low-temperature P-type GaN layer, due to the growth and formation of trimethylgallium, the content of carbon impurities in it is relatively high, and the carbon impurities may form donors in the P-type GaN, thereby compensating The acceptor increases the resistivity of P-type GaN, which in turn increases the forward voltage of the light-emitting diode, resulting in a decrease in the luminous efficiency of the light-emitting diode

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