Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping
A polysilicon and silicon single crystal technology, which is applied in the field of preparation of large-diameter micro-nitrogen silicon single crystals of 8 to 12 inches, can solve problems such as difficult control, prolonged time, and high nitrogen concentration, and achieve the effect of reducing production costs
Inactive Publication Date: 2005-02-23
ZHEJIANG UNIV
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Problems solved by technology
Silicon single crystals can also be grown under nitrogen gas, but as the diameter of silicon single crystals increases, the time of the whole process is also extended. Using ordinary nitrogen protective gas to grow large-diameter silicon single crystals, the concentration of nitrogen in the crystals is too high. difficult to control
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[0008] In this example, high-purity polysilicon is used as the raw material, the dopant is phosphorus, and an n-type 8-inch silicon single crystal is grown, and the target resistivity is 10-40Ω.cm. Put polycrystalline silicon into a quartz crucible, and raise the temperature above 1400°C under the protection of argon. When the polysilicon is melted, high-purity nitrogen is used as a protective gas. The purity of nitrogen is 99.9999%, the pressure of nitrogen is 40 Torr, the flow rate of nitrogen is 80 l / min, and the time is 30 minutes. At this time, nitrogen enters the silicon melt. Then, switch to high-purity argon protection until the silicon crystal growth ends.
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The invention is a method for producing minim nitrogen silicon single crystal by adding nitrogen into melting polycrystal. When the polycrystal is melting, the nitrogen is used as protection gas, the press of high purity nitrogen is 5-200 Torr, the flux is 1-2001 / min, the time is 1-1000 minutes, after the polycrystal is melted, it uses argon as the protection gas to the finish of silicon crystal growth.
Description
technical field [0001] The invention relates to a method for growing micro-nitrogen silicon single crystal by melting polycrystalline silicon and doping nitrogen. It is especially suitable for the preparation of large-diameter micro-silicon nitrogen single crystals of 8 to 12 inches. Background technique [0002] VLSI is developing in the direction of gradually decreasing characteristic line width and gradually increasing silicon wafer diameter. At present, the 8-inch silicon single crystal in the international market has reached more than 40%, and the 12-inch silicon single crystal has also been put into commercial production. The existing technologies in this area are mature and too numerous to enumerate. For example, the methods for growing silicon single crystals disclosed in Chinese patents CN66102558A and CN85100295A describe conditions such as crystal components, growth methods, heating methods, temperature field control, and pressure...
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IPC IPC(8): C30B27/00
Inventor 李立本杨德仁阙端麟
Owner ZHEJIANG UNIV