Diamond grinding wheel for cutting silicon crystal circle and preparation method thereof

A diamond grinding wheel and silicon wafer technology, which is applied in metal processing equipment, manufacturing tools, grinding/polishing equipment, etc., can solve the problems that the grinding wheel cannot guarantee the strength and rigidity, affects the cutting quality and cutting efficiency, and chipping, and achieves Reduced processing time, good strength and rigidity, reduced chipping and serpentine cutting effects

Active Publication Date: 2010-01-27
赛尔科技(如东)有限公司
View PDF0 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional flat cutting grinding wheel has fatal shortcomings: when the grinding wheel reaches a certain thickness (such as 0.015mm) and precision (thickness tolerance ± 0.002mm), the grinding wheel cannot guarantee the strength and rigidity required for efficient cutting. Vibration, chipping, or even breakage occurs during cutting, which seriously affects the cutting quality and cutting efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diamond grinding wheel for cutting silicon crystal circle and preparation method thereof
  • Diamond grinding wheel for cutting silicon crystal circle and preparation method thereof
  • Diamond grinding wheel for cutting silicon crystal circle and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Selection of raw materials and their technical conditions:

[0037] Nickel sulfate: chemically pure, the content of nickel sulfate hexahydrate is more than 99.5%;

[0038] Cobalt sulfate: chemically pure, the content of cobalt sulfate heptahydrate is above 99.5%;

[0039] Diamond powder: the particle size is from 320# to 4800#, and the quality reaches the national standard;

[0040] Deionized water: pH value: 6.5~7.5; conductivity: below 5.0μs / cm;

[0041] Aluminum alloy substrate: grade 7050;

[0042] Suspending agent: nonylphenol polyoxyethylene ether (OP-10).

[0043] The above-mentioned raw materials are commonly used component materials in the art, and are known substances well known to those skilled in the art;

[0044] Raw material pretreatment:

[0045] Diamond powder pretreatment:

[0046] ① Treat the selected diamond powder with 50% (volume percent) nitric acid at 80°C for 2 hours for demagnetization and decontamination;

[0047] ② Wash 3 times with...

Embodiment 2

[0067]An ultra-thin, 0.015 mm, ultra-fine, ±0.002 mm, roulette-type diamond grinding wheel was prepared by the method in Example 1.

[0068] Take ordinary ultra-thin, 0.015mm, ultra-fine, ±0.002mm, flat cutting grinding wheel.

[0069] Use the above two grinding wheels to cut silicon wafers respectively. The disc type grinding wheel obtained in Example 1 greatly reduces the chipping and serpentine cutting of the product, reduces the occurrence of damage, fracture, etc., thereby improving the cutting accuracy and shortening the cutting time. The processing time is reduced, and the production efficiency is increased by about 15%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a diamond grinding wheel for cutting a silicon crystal circle and a preparation method thereof. The method comprises the following steps: (1) preprocessing an aluminum alloy basal body; (2) configuring electroforming liquid: configuring the electroforming liquid according to the weight ratio of (38-43):(15-20):(43-57):(50-180):(4-8) of nickel sulphate, cobalt sulphate, deionized water, a diamond grinding material and a suspending agent; fully stirring evenly and obtaining the electroforming liquid; (3) carrying out insulation processing on the aluminum alloy basal body obtained in the step (1), putting the aluminum alloy basal body into the electroforming liquid, electroforming in an ultrasonic field, evenly precipitating the diamond grinding material in the electroforming liquid and metal on the basal body together and obtaining a grinding wheel blank body with a compound electroforming layer; and (4) taking out the grinding wheel blank body completing electroforming, and carrying out accurate processing on the grinding wheel blank body on a numerical control grinder and a numerical control lathe respectively according to the accuracy requirements of the required basal body and the required cutting edge. The diamond grinding wheel obtained by the invention meets the ultrathin and superfine technical conditions and also has favorable strength and rigidity.

Description

technical field [0001] The invention relates to a silicon wafer cutting tool and a preparation method thereof, in particular to a diamond grinding wheel for cutting a silicon wafer and a preparation method thereof. Background technique [0002] Wafer (such as silicon wafer) cutting belongs to the field of high-tech processing, and the market is huge. The requirements for cutting tools are: thin thickness, good strength, and high precision. Experts in the field of superhard materials have long regarded wafer cutting grinding wheels as one of the main development directions for the development of superhard material tools. However, the traditional flat cutting grinding wheel has fatal shortcomings: when the grinding wheel reaches a certain thickness (such as 0.015mm) and precision (thickness tolerance ± 0.002mm), the grinding wheel cannot guarantee the strength and rigidity required for efficient cutting. Vibration, chipping, or even fracture occur during cutting, which seriou...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B24D18/00B24B27/06C25D1/00
Inventor 冉隆光王凯平
Owner 赛尔科技(如东)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products