Making process of double-layered photoresist for semiconductor manufacture

Abstract

The invention discloses a double-layer photoresist manufacturing method for semiconductor manufacturing. First, a layer to be etched is provided on the substrate, then a photoresist layer containing silicon at the bottom is covered on the substrate, and the photoresist layer containing silicon at the bottom is baked. The bottom silicon-containing photoresist layer is processed to form a silicon monoxide layer on its surface. After that, a top photoresist layer is covered on the silicon oxide layer, and the top photoresist layer is baked. The top photoresist layer is then exposed and developed to form a pattern therein; this pattern is then transferred into the silicon oxide layer and the bottom silicon-containing photoresist layer.

Description

technical field [0001] The present invention relates to a method of fabricating integrated circuits and other electronic devices. In particular, it refers to a double-layer photoresist process that is an improved photoresist patterning process, which can be used in the manufacture of integrated circuits and other electronic devices. Background technique [0002] With the improvement of integration and function of electronic devices, the wire structure becomes more and more complex and multi-layered. When manufacturing semiconductor devices with higher integration and more functions, it is necessary to use argon fluoride excimer laser (ArF excimer laser) and deep ultraviolet light (deep ultraviolet; DUV) or even extremely short ultraviolet light (extreme ultraviolet; EUV) as the exposure light source, the wavelength used tends to be shorter and shorter. However, the use of short-wavelength light sources will cause some problems, including the transmittance of the photoresis...

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Problems solved by technology

However, this method also has the disadvantages mentioned above

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